LE25U20AMB-AH

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	2Mb (256K x 8)
Clock Frequency:	30MHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	SPI
Voltage - Supply:	2.3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP
Base Part Number:	LE25U20A

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LE25U20AMB-AH MemoryLE25U20AMB-AH is a type of non-volatile memory device used in various applications such as ROM, RAM and flash memory. LE25U20AMB-AH is an ideal solution for embedded systems as they provide low-cost, low-power operation in an extremely small form factor. This type of memory offers higher performance compared to many other types of non-volatile memory, while at the same providing significant energy savings and long-term reliability. In this article, we will discuss LE25U20AMB-AH’s application field and working principle. Application field of LE25U20AMB-AHThis type of memory is widely used in embedded systems and mobile devices, such as smartphones and tablets. In addition, LE25U20AMB-AH is used in applications like automotive and industrial control where high speed, low cost, and low power consumption are very important. LE25U20AMB-AH is also used in consumer electronics such as digital cameras and portable music players. Furthermore, this type of memory can be used in medical electronics, gaming and also in military applications. Working Principle of LE25U20AMB-AHThe LE25U20AMB-AH memory works on a cross-point architecture, which involves a NAND cell array connected to multiple sets of bit lines and word lines. Each NAND cell in the array stores one bit of data and consists of a number of transistors that are connected to the word and bit lines. A NAND cell is basically a non-volatile storage cell and works by charging and discharging the transistors using voltages and currents applied to the word and bit lines. When the word line is selected, all the memory cells on the selected word line are connected to their respective bit lines, thus connecting the bit lines to their contents in the array. When the cell is written to, the stored charge is altered and the cell is read out by applying a certain voltage and detecting the current supplied by the cell. The data is then written back to the memory cell with modified contents. The data is transferred in and out of the device as predetermined output codes, sent in a serial format. The data is read or written in blocks of 8 bits, or bytes. The device’s controller is responsible for the operations, including executing instructions from the host, sending and receiving data from the memory cells, and regenerating the data. LE25U20AMB-AH has been designed to offer reliable performance and long-term reliability. It features an advanced wear-leveling algorithms and ECC (Error Correction Code) that ensures that even when a single bit is corrupted, it is safely resolved during a subsequent read operation. The memory also offers chip protection features such as an unlocked/locked blocks and a password lock feature that protect data from unauthorized access. Overall, LE25U20AMB-AH is a non-volatile memory device used in various applications. It is used in embedded systems and mobile devices, such as smartphones and tablets, while also offering various chip protection features. The device’s works by charging and discharging transistors connected to the word and bit lines, transferring data in and out of the device in predetermined output codes and executing instructions from the controller, while also offering reliable performance and long-term reliability.

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