LE25S81QETXG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	8Mb (1M x 8)
Clock Frequency:	40MHz
Write Cycle Time - Word, Page:	500µs
Memory Interface:	SPI
Voltage - Supply:	1.65 V ~ 1.95 V
Operating Temperature:	-40°C ~ 90°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	8-VDFN/VSONT (6x5)

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Introduction
LE25S81QETXG is a type of memory chip that has been developed to meet the needs of the computer industry. It offers high performance, low power consumption, and cost-effectiveness. The chip provides a high-speed data transfer rate and low power consumption. It is designed for use in computers, servers, and other complex applications.Application Field
LE25S81QETXG is mainly used for computer applications such as server-based applications, servers with multiple CPUs, and high-end consumer electronics products. It is also useful for military and aerospace applications. Because of its low power consumption, it is suitable for applications where power efficiency is a priority. It is also suitable for applications that require rapid data transfer, such as video streaming applications.Working Principle
The LE25S81QETXG supports both random and sequential access. It is capable of simultaneous read and write operations. It is divided into four different memory banks, each with a separate address bus and bus controller. Each memory bank is 79 bits wide, and each bank has 6 separate controllers. Data is transferred using Write Cycle, Read Cycles and Refresh Cycles. In a Write Cycle, bits are written from an external bus to the memory bank. In a Read Cycle, bits are read from the memory bank to an external bus. In a Refresh Cycle, rows of data in the memory bank are read and then written back.Conclusion
LE25S81QETXG is a high-speed, low power consumption memory chip that is suitable for use in applications requiring rapid data transfer. It is designed for server-based applications, servers with multiple CPUs, and high-end consumer electronics products. It is also suitable for military and aerospace applications where power efficiency is a priority. It supports both random and sequential access and is divided into four different memory banks, each with a separate address bus and bus controller. Data is transferred using Write Cycle, Read Cycles and Refresh Cycles.

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