M1MA141WAT1 Allicdata Electronics
Allicdata Part #:

M1MA141WAT1-ND

Manufacturer Part#:

M1MA141WAT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY GP 40V 100MA SC70-3
More Detail: Diode Array 1 Pair Common Anode Standard 40V 100mA...
DataSheet: M1MA141WAT1 datasheetM1MA141WAT1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 100nA @ 35V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: M1MA141W
Description

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Diodes - Rectifiers - Arrays

A M1MA141WAT1 application field and working principle introduction is necessary in order to understand how this particular type of diode array works and is used.

M1MA141WAT1 is a dual channel rectifier array from Diodes Incorporated. It is designed for applications requiring isolating rectification for up to 50V in 2-4 line systems. It is available in a variety of packages, such as DIP-4, DIP-5, SO-4, and SMZ to allow for great design flexibility.

The device is a family of full wave rectifiers requiring only one additional input control signal per channel to provide full wave rectification, making it an ideal choice for a variety of applications. It features two channels without a common cathode, enabling individual control of each channel with the addition of just one input signal. It is targeted for applications such as multiplexers, DC/DC converters, high-speed switching, and voltage dividers. The device also has a wide dynamic range of up to 10 V, allowing for flexible design.

This device enables efficient energy conversion, with less than 1 ns typical turn-on and turn-off times. It provides low voltage drop and low power consumption thanks to its low operating temperature, low-leakage current, reverse recovery time, and low on-resistance. It also has an integrated ESD protection feature, which ensures that the device can handle external transient voltages without any significant performance degradation.

The principle of operation of M1MA141WAT1 rectifier array involves a number of aspects. First, it requires a single input control signal to control each channel. This signal is sweeped from low to high to generate the appropriate voltage to sustain the output diode. The output diode of each channel contains a selectable negative temperature coefficient which is applied to help regulate the output voltage. Additionally, the output diode can also be designed to operate in Flyback mode to further improve the efficiency of the circuit.

The M1MA141WAT1 rectifier array is also designed with the features of the integrated logic family, allowing the device to operate automatically upon the application of the control signal. This enables the device to be used in applications requiring precise timing, high power efficiency, and fast switching capabilities. Additionally, the integrated logic family also offers a wide operating temperature range and low power consumption with low output leakage current. The device also features integrated MOSFETs which have excellent surge capacity and can operate from -55C to +125C.

In conclusion, the M1MA141WAT1 rectifier array is an excellent and versatile diode array for applications requiring isolating rectification up to 50V. It offers a wide dynamic range, low voltage drop, fast switching, and low power consumption. The device is also designed with the features of the integrated logic family, making it suitable for applications requiring precise timing. Additionally, the integrated logic family offers a wide operating temperature range and low power consumption with low output leakage current. The device also features integrated MOSFETs which have excellent surge capacity and can operate from -55C to +125C.

The specific data is subject to PDF, and the above content is for reference

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