M1MA152WKT1G Allicdata Electronics

M1MA152WKT1G Discrete Semiconductor Products

Allicdata Part #:

M1MA152WKT1GOSTR-ND

Manufacturer Part#:

M1MA152WKT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY GP 80V 100MA SC59
More Detail: Diode Array 1 Pair Common Cathode Standard 80V 100...
DataSheet: M1MA152WKT1G datasheetM1MA152WKT1G Datasheet/PDF
Quantity: 15000
Stock 15000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Base Part Number: M1MA152W
Description

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Introduction

M1MA152WKT1G is an array of four low voltage MOSFETs (LV-MOSFETs) in a miniature 3mm x 4mm package. This kind of rectifier array is suitable for applications that require high power density, ultra low on-resistance and high switching speeds. It is specially designed for use in mid-power applications, such as PFC and motor control, in power systems and consumer electronics.

Application

LV-MOSFETs, such as M1MA152WKT1G, are typically used in high frequency switching applications. In these applications, the low-voltage MOSFETs allow for precise control of power conversion. This is achieved by switching devices on and off in a precise manner, to regulate voltage and current in the power system. LV-MOSFETs are used in AC-DC and DC-DC converters for power supplies, in power amplifiers for audio applications, and in motor speed and position control applications.

Working Principle

M1MA152WKT1G acts as a regular rectifier array. It is constructed with a MOSFET array that includes four MOSFETs connected in parallel. Each of these MOSFETs has an n-type and p-type layer. The n-type layer is connected to the ground, while the p-type layer is connected to a voltage source. The layer furthest away from the voltage source is connected to the load. When the voltage source is positive, current flows from the voltage source, through the p-type layer, and into the load, allowing the power to be delivered to the load. When the voltage source is negative, the current does not flow, preventing any power from being delivered to the load.

Conclusion

M1MA152WKT1G is a rectifier array designed for use in high power and high frequency switching applications. It is constructed with four low voltage MOSFETs in a small package, which allows for power density and high switching speeds. This type of rectifier array can be used in a variety of applications, such as AC-DC and DC-DC power converters, power amplifiers, and motor speed and position control.

The specific data is subject to PDF, and the above content is for reference

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