M1MA152WKT1G Discrete Semiconductor Products |
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| Allicdata Part #: | M1MA152WKT1GOSTR-ND |
| Manufacturer Part#: |
M1MA152WKT1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE ARRAY GP 80V 100MA SC59 |
| More Detail: | Diode Array 1 Pair Common Cathode Standard 80V 100... |
| DataSheet: | M1MA152WKT1G Datasheet/PDF |
| Quantity: | 15000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Cathode |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 80V |
| Current - Average Rectified (Io) (per Diode): | 100mA (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 100mA |
| Speed: | Small Signal = |
| Reverse Recovery Time (trr): | 3ns |
| Current - Reverse Leakage @ Vr: | 100nA @ 75V |
| Operating Temperature - Junction: | 150°C (Max) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SC-59 |
| Base Part Number: | M1MA152W |
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Introduction
M1MA152WKT1G is an array of four low voltage MOSFETs (LV-MOSFETs) in a miniature 3mm x 4mm package. This kind of rectifier array is suitable for applications that require high power density, ultra low on-resistance and high switching speeds. It is specially designed for use in mid-power applications, such as PFC and motor control, in power systems and consumer electronics.
Application
LV-MOSFETs, such as M1MA152WKT1G, are typically used in high frequency switching applications. In these applications, the low-voltage MOSFETs allow for precise control of power conversion. This is achieved by switching devices on and off in a precise manner, to regulate voltage and current in the power system. LV-MOSFETs are used in AC-DC and DC-DC converters for power supplies, in power amplifiers for audio applications, and in motor speed and position control applications.
Working Principle
M1MA152WKT1G acts as a regular rectifier array. It is constructed with a MOSFET array that includes four MOSFETs connected in parallel. Each of these MOSFETs has an n-type and p-type layer. The n-type layer is connected to the ground, while the p-type layer is connected to a voltage source. The layer furthest away from the voltage source is connected to the load. When the voltage source is positive, current flows from the voltage source, through the p-type layer, and into the load, allowing the power to be delivered to the load. When the voltage source is negative, the current does not flow, preventing any power from being delivered to the load.
Conclusion
M1MA152WKT1G is a rectifier array designed for use in high power and high frequency switching applications. It is constructed with four low voltage MOSFETs in a small package, which allows for power density and high switching speeds. This type of rectifier array can be used in a variety of applications, such as AC-DC and DC-DC power converters, power amplifiers, and motor speed and position control.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| M1MA152WAT1G | ON Semicondu... | -- | 12000 | DIODE ARRAY GP 80V 100MA ... |
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| M1MA142KT1 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 80V 100MA ... |
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M1MA152WKT1G Datasheet/PDF