M1MA152KT1G Discrete Semiconductor Products |
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Allicdata Part #: | M1MA152KT1GOSTR-ND |
Manufacturer Part#: |
M1MA152KT1G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 80V 100MA SC59 |
More Detail: | Diode Standard 80V 100mA (DC) Surface Mount SC-59 |
DataSheet: | M1MA152KT1G Datasheet/PDF |
Quantity: | 12000 |
3000 +: | $ 0.01940 |
6000 +: | $ 0.01750 |
15000 +: | $ 0.01521 |
30000 +: | $ 0.01370 |
75000 +: | $ 0.01217 |
150000 +: | $ 0.01014 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io): | 100mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 3ns |
Current - Reverse Leakage @ Vr: | 100nA @ 75V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | M1MA152 |
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Diodes - Rectifiers - Single
M1MA152KT1G is an epitaxial planar silicon diode, which is classified as a single rectifier. Its main application field is power supply. It is designed for switching and rectification applications with high current capacity and low forward voltage drop. Comparing to standard rectifier diodes, M1MA152KT1G has higher surge current handling capability, which can up to 8A~15A. Moreover, this device has an ultralow forward voltage drop, ranging from 0.55V to 0.45V.
M1MA152KT1G is made with two semiconductor terminals, called anode and cathode. This device blocks voltage in reverse direction, while the anode and cathode is reversed connected. In forward direction, it will act as a short circuit. When the anode is at higher potential than the cathode, this device will allow current flows from anode to cathode, and voltage drop across the device will be dependent on the current.
The reverse recovery time is one of the most important parameters for a diode. It determines the switching speed of the diode, which is the time required for the diode to switch off after it has been reverse biased. The reverse recovery time of M1MA152KT1G can be up to 200ns, which is much faster than that of standard rectifier diodes. This means that M1MA152KT1G can achieve a higher switching speed and efficiency.
M1MA152KT1G has many features and it is widely used in power supply applications. It is able to handle higher current and its low forward voltage drop increases the efficiency of the device. Moreover, its fast reverse recovery time allows for faster switching speed and improved efficiency. All these features make the M1MA152KT1G an ideal choice for many power supply applications.
The specific data is subject to PDF, and the above content is for reference
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