Allicdata Part #: | M1MA152KT1-ND |
Manufacturer Part#: |
M1MA152KT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 80V 100MA SC59 |
More Detail: | Diode Standard 80V 100mA (DC) Surface Mount SC-59 |
DataSheet: | M1MA152KT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io): | 100mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 3ns |
Current - Reverse Leakage @ Vr: | 100nA @ 75V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | M1MA152 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
M1MA152KT1 is an integrated circuit device from one of the many rectifier diodes family that offers a variety of features and versatile application options making it an ideal choice for small scale and high-performance electronics applications. This device is designed to provide a one-stop shop rectifier diode solution with high efficiency, low cost and excellent operational characteristics.
The M1MA152KT1 is a single phase, full range, surface mount diode rectifier that is offered in a TO-220 package with a maximum peak inverse voltage of 400V. It is designed with a low insertion loss and peak current rating of 5A to ensure high efficiency performance and reliable operation. The peak reverse recovery current of 1mA provides a fast response to transient load operations ensuring smooth, glitch-free operation in output signals.
This product offers high temperature operation capability up to 150°C making it suitable for use in wide temperature range applications and for high-intensity, high-power applications that require prolonged heat dissipation. The M1MA152KT1 device has been designed with extremely low on-state current leakage resulting in the reduced heat dissipation and power dissipation while in operation guaranteeing the low operating temperature rise.
This device has a wide range of applications including use in power electronic circuits, power supplies, voltage regulators, inverters, radio frequency amplifiers, cellular phones, and consumer electronics. Furthermore, the M1MA152KT1 can be used in many power applications, such as battery chargers, cell phone chargers, DC/DC converters, and photovoltaic inverters.
The working principle of the M1MA152KT1 is based on its structure of an n-type doped silicon substrate, with a heavily doped n-region and a lightly doped n-region producing a p-n junction in the device. When an external voltage source is applied to this p-n junction, a current flow is permitted in only one direction changing the voltage on the junction itself. This effect is known as rectification and allows the M1MA152KT1 to convert AC into DC.
The M1MA152KT1 offers high performance, low power consumption and reliability in a convenient, surface mount package. With its high temperature operating capabilities, low back currents and fast response to transient load operations, this device is a preferred choice for many electronic applications that require excellent performance at an economical cost.
The specific data is subject to PDF, and the above content is for reference
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