M29F010B70K6T

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-LCC (J-Lead)
Supplier Device Package:	32-PLCC (11.35x13.89)
Base Part Number:	M29F010B

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Introduction to M29F010B70K6T

M29F010B70K6T is a synchronous burst-mode flash memory which offers a high performance technology, allowing high speed and low power operation. It is a 1M x 8-bit (8Mb) CMOS Flash memory organized as 128K x 8 bytes with a 3-byte sector addressing technique. It has an expanded address bus that supports up to 4 kB sector addressing. It is used in a variety of applications, including automotive, industrial, networking, medical and computing applications where reliability, high speed and low power consumption are required.

Application Fields of M29F010B70K6T

M29F010B70K6T can meet the data storage needs of many applications such as automotive, industrial, networking, medical and computing applications. In automotive field, it is applied for Vehicle ECU, Engine Control, Car Key Control, Accessory Control and Security System. In industrial field, it is applied for factory automation, access control, industrial PC system, PA/Amplifier and Motor Control System. In networking field, it is applied for Network hardware, VOIP hardware and Network Security System. In medical field, it is applied for Medical Equipment, Medical System and Medical Devices. In computing field, it is applied for Computer/PC Peripherals, Embedded System and Set-top Box.

Working Principle of M29F010B70K6T

In general, M29F010B70K6T works by storing data in an array of floating gate transistors called flash cells. Each cell holds a small amount of memory, with each cell connected to a bit line. This allows the memory to be accessed in blocks of data, where each block is held in one or multiple cells. The device operates in a Read, Program, and Erase (RPE) cycle. All memory operations, including read, program and erase are performed on sector basis. In Read operation, the middle address in each sector is loaded into the address register, effecting the data output from the address register onto the I/O lines. In Program operation, the data from the I/O lines is stored in the array cells at the middle address of the sector. In Erase operation, all cells within the sector are erased together with the memory content.

Conclusion

M29F010B70K6T is a synchronous burst-mode flash memory which offers a high performance technology, allowing high speed and low power operation, making it suitable for a variety of applications including automotive, industrial, networking, medical and computing applications. The device works by storing data in an array of floating gate transistors called flash cells, and all memory operations, including read, program and erase, are performed on sector basis.

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