M29F010B45K6E Allicdata Electronics
Allicdata Part #:

M29F010B45K6E-ND

Manufacturer Part#:

M29F010B45K6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1M PARALLEL 32PLCC
More Detail: FLASH - NOR Memory IC 1Mb (128K x 8) Parallel 45n...
DataSheet: M29F010B45K6E datasheetM29F010B45K6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.35x13.89)
Base Part Number: M29F010
Description

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M29F010B45K6E is a type of memory that is popularly used by many device manufacturers. It is a 1 megabyte (MB) Flash memory with a 45 nanometer (nm) process technology. This high-density memory device is powered by a single 5 volt supply and comes with a wide operating temperature range. It is ideal for data storage and code execution in applications in a variety of fields, especially in industrial electronics.

M29F010B45K6E is a 64K x 16 (64K bytes) nonvolatile Flash memory chip. It is composed of 768 sectors and 16 blocks, each with 4K words of 16 bits each. It is organized in a linear 512 byte sector configuration for erase and program operations. In addition, this memory device is fast and reliable, with byte programming time ranging from 20 ms to 40 ms and an endurance of 10,000 write cycles.

This Flash memory device has many applications, ranging from consumer devices to industrial equipment. It is used in digital consumer products including MP3 players, digital cameras, PDAs, mobile phones and automotive electronics. In industrial applications, it is used in medical devices, gaming consoles, test and measurement equipment, communications equipment, and industrial automation systems. It is also used in embedded systems, where they are used to boot and store any program or firmwares.

The working principle of M29F010B45K6E is based on flash memory technology. It works by storing data electrically in a non-volatile way, meaning that the data is retained even after the power has been removed from the memory device. It works through programming by injecting electric charge into the floating gate of a flash cell transistor. This creates a threshold voltage, allowing for data write and read operations. In addition, erase operations are also done by injecting electric charge into the flash memory cell, allowing for secure erasure of data.

M29F010B45K6E is a versatile and reliable memory device with a wide range of applications. It provides high speeds, long endurance and low power consumption, making it an ideal memory solution for a variety of applications. With its wide range of features, M29F010B45K6E is the perfect memory solution for industrial applications, consumer devices, and embedded systems.

The specific data is subject to PDF, and the above content is for reference

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