M29F040B70K6

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M29F040B70K6 is a 4 mega-bit, single-chip, low-voltage (3.3V~3.6V) Flash memory device. It is organized as 512K words by 8-bits, and includes an additional 128K-words by 8-bits of lockable program memory (OTP mode) or erasable/programmable EEPROM memory (E/P mode). It is suitable for a variety of low-performance applications.

M29F040B70K6 Application Field

M29F040B70K6 is widely used in many industrial applications such as automotive, industrial and high-end consumer electronics. It can be used for code storage, data storage, programmable parameters storing, prototyping, and hardware/software debugging, etc.

In automotive field, it can also be used for module programming, calibration and updating, protocol converting and data transfer. In industrial control and process control, it can be used for various types of system security and data logging. In consumer electronics, it can be used to store and control adaptable parameters, data logging and software updating of mobile and stationary devices.

M29F040B70K6 Working Principle

M29F040B70K6 uses a non-volatile Flash memory architecture which allows users to store data with power removed. It also has a built-in 8-bit programmable EEPROM that can facilitate non-volatile storage of programmable parameters and software instructions.:

The memory device is organized as 512K words by 8-bits and includes an additional 128K-words by 8-bits of lockable program memory. The read control is CMOS-compatible, with access and control signals compatible with the Intel 80C51 family of microcontrollers.

The write control is EPROM-compatible, but data is reloaded only after power-on reset (POR) and is not loaded following power interruptions. The device also features security circuitry which allows the chip-level lockfuncitons to be enabled or disabled. In addition, the device features a 64-byte block erase capability.

The M29F040B70K6 is program erase-protected by a write inhibit line which prevents unauthorized changes to data stored in the device. The device also features sector protection to allow or prevent changes to data stored in the device.

The memory device also includes advanced data protection provisions that support advanced system-level fault-tolerant procedures, such as redundant error correction schemes, block verification, and data recovery.

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