M29F040B70K6E TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	4Mb (512K x 8)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-LCC (J-Lead)
Supplier Device Package:	32-PLCC (11.35x13.89)
Base Part Number:	M29F040

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M29F040B70K6E TR Application Field and Working Principle

Memory has come a long way since its beginnings in the early 20th century. Back then, people relied on primitive technologies like punched cards and paper-based storage to keep track of information. In modern times, memory has evolved to a more advanced and powerful form, with larger storage capacities and faster transfer rates. One prime example of this is the M29F040B70K6E TR, a product of STMicroelectronics. This article will discuss the application field and working principle of the M29F040B70K6E TR.

Application Field of M29F040B70K6E TR

The M29F040B70K6E TR is a 4-megabit Electrically-Erasable Programmable-Read-Only Memory (EEPROM). It\'s a low-voltage serial memory which offers a maximum programming current of only 2 mA, making it an ideal choice for use in low-power applications. It also features a fast programming time of 200 us, as well as low power consumption, making it suitable for use in portable and battery powered devices. The M29F040B70K6E TR is also capable of being reprogrammed up to 100,000 times, so it\'s ideal for applications that require frequent updating.The M29F040B70K6E TR is designed for a variety of applications, such as automotive, industrial, and consumer markets. It is highly suitable for use in applications that require frequent write cycles, such as data loggers, instrumentation, and other remote applications. The memory is also ideal for use in embedded systems, such as engine control units and other critical electronic systems.

Working Principle of M29F040B70K6E TR

The M29F040B70K6E TR is a serial EEPROM which operates using a two-wire serial interface. It can be programmed or read in a wide range of communication modes, including I2C, SPI, and one-wire. The memory is capable of storing up to 4,096 bytes of data, with a byte accessibility range of 1 byte to 128 bytes. The device is divided into 64 pages, which each contain 64 bytes of memory. The M29F040B70K6E TR features programmable features like write protection, data and block locking, and self-timed programming. The device also features a built-in erase/write verification system which can be used as a means of verifying that a program or erase operation has completed successfully. The device also utilizes a 10-Bit Cyclic Redundancy Check (CRC) for detecting data errors. The programming and erasure process for the M29F040B70K6E TR does not require the use of external voltage delivery. Instead, the device is capable of operating on its own internal supply voltage, as well as using the power from an external power source. The data written to the M29F040B70K6E TR is also retained for up to 40 years, so the memory does not need to be rewritten frequently.

Conclusion

The M29F040B70K6E TR is a highly advanced and reliable memory which offers a variety of features and benefits. It\'s ideal for use in low-power applications, and its capabilities make it suitable for a variety of applications in the automotive, industrial, and consumer markets. The device also features low power consumption and a long data retention time of up to 40 years. The memory offers a variety of programmable features, such as write protection, data and block locking, and self-timed programming, making it a reliable and versatile solution.

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