M95128-DRMF3TG/K Integrated Circuits (ICs)

Series:	Automotive, AEC-Q100
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	128Kb (16K x 8)
Clock Frequency:	20MHz
Write Cycle Time - Word, Page:	4ms
Memory Interface:	SPI
Voltage - Supply:	1.8 V ~ 5.5 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WFDFN Exposed Pad
Supplier Device Package:	8-MLP (2x3)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Application Field and Working Principle of M95128-DRMF3TG/K

Memory is the most important component of any computer, affecting performance, reliability, and ultimately the return on investment of the entire computer system. M95128-DRMF3TG/K is a family of low-cost, high-density non-volatile memory products designed for application in embedded systems.The M95128-DRMF3TG/K family is based on the commonly used Serial Peripheral Interface (SPI) bus. This serial bus is used to interface the devices directly with an embedded microcontroller. The devices are organized as pages of 32 words each and addressable in byte, word and page modes. Memory density can range from 128K to 512K bits and the operating range is 4.5-5.5 V.In addition to the standard Serial Peripheral Interface, the devices also include a number of features that make them ideal for a wide range of applications ranging from Status memory, Data Logging, and Code Storage. The features include; low power consumption, self timed write cycles, page write capability, burst read capability and a high level of reliability.The low power consumption of the M95128-DRMF3TG/K memory device comes from two sources, the interface logic and the memory cells themselves. The interface logic is powered by the host system and consumes low power throughout the active period. The non-volatile memory cells are configured in a cross coupled arrangement and when deselected, consume almost no power. When selected, power consumption increases only with the number of active transistors, thus reducing the overall power consumption of the device.The device is designed for a self-timed write cycle which works in three stages; 1) A "Set" command is sent to the device, causing all the latched data bits to be set to the high impedance state, 2) The Write Enable is asserted, at which time all the data bits are actively driven out on the bus and strobed into the device and finally 3) The write latch is reset and the device returns to the idle state. The self-timed write operation ensures that data is accurately transferred to the device without any need for host intervention.The M95128-DRMF3TG/K non-volatile memory device is one of the most reliable memory solutions for embedded systems. It has a wide temperature operating range and shock and vibration resistance, along with lower power consumption, making it ideal for battery powered applications. The device uses an advanced cell technology developed and tested by the manufacturer that gives it excellent endurance in data retention and reliability.In summary, the M95128-DRMF3TG/K memory device is an excellent choice for embedded systems where cost and durability are paramount. Its wide range of features, low power consumption and superior reliability make it an ideal solution for a variety of applications. Its easy to use SPI interface and wide temperature operating range make it a perfect fit for a wide range of battery powered systems.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description