M95128-WMN6T Allicdata Electronics
Allicdata Part #:

M95128-WMN6T-ND

Manufacturer Part#:

M95128-WMN6T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EEPROM 128K SPI 20MHZ 8SO
More Detail: EEPROM Memory IC 128Kb (16K x 8) SPI 20MHz 8-SO
DataSheet: M95128-WMN6T datasheetM95128-WMN6T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: M95128
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The Memory M95128-WMN6T is a high performance, low power and extended lifetime memory component. It is an advanced non-volatile memory component that is built using a combination of advanced silicon technologies and special process technologies. Designed to offer superior reliability, longevity, and energy efficiency, the M95128-WMN6T memory component is ideal for a wide range of industrial and commercial applications.

Applications of the memory component include data storage and archiving, medical and automotive diagnostics, industrial control and process automation, robot control, and embedded systems. The device’s high performance, low power consumption, and extended lifetime make it an ideal choice for any application that requires robust, dependable, long lasting non-volatile memory.

The M95128-WMN6T employs a novel non-volatile memory technology called Ferro-magnetic tunnel junction (FTJ). FTJ technology is a process in which very thin layers of specialized materials are combined to form a tunneling junction. The combination of these thin layers form a very strong magnetic connection that is extremely resistant to wear and tear, eliminating the need for redundant memory components.

The FTJ memory cell structure is also resistant to temperature changes and vibration, allowing the M95128-WMN6T to achieve exceptional levels of reliability and data retention. The FTJ technology also helps to reduce the time required to write data to the memory component, reducing power requirements and providing a longer life cycle.

In addition to its superior reliability, the M95128-WMN6T offers a variety of other features and benefits. The component offers an outstanding level of downsize and shrinkage, allowing it to fit into even the tightest spaces. The component is also capable of voltage level shifting, making it electrically compatible with a wide range of different devices and systems.

Finally, the component offers an integrated protection layer which helps to prevent data corruption, making it an ideal choice for applications that are sensitive to data loss or errors. The device also has an integrated power monitoring system that helps to reduce power consumption.

The M95128-WMN6T memory component is an ideal choice for applications requiring reliable, long-lasting, low power non-volatile memory. With its combination of advanced FTJ technology and superior features and benefits, the component can provide dependable and reliable data storage in a wide range of different applications. It is an excellent choice for those looking for a dependable and efficient memory component.

The specific data is subject to PDF, and the above content is for reference

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