M95128-WMN6TP Allicdata Electronics

M95128-WMN6TP Integrated Circuits (ICs)

Allicdata Part #:

497-8686-2-ND

Manufacturer Part#:

M95128-WMN6TP

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EEPROM 128K SPI 20MHZ 8SO
More Detail: EEPROM Memory IC 128Kb (16K x 8) SPI 20MHz 8-SO
DataSheet: M95128-WMN6TP datasheetM95128-WMN6TP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: M95128
Description

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M95128-WMN6TP is a dynamic random-access memory (DRAM) device. It is a type of memory that can be rewritten electrically. In other words, data stored in the memory can be modified without the need of re-writing the entire device. It is usually used to store large amounts of data in a computer, such as when a user is doing a graphic-intensive task or playing a video game. The device works by storing electrical signals as binary data (1s and 0s).

The M95128-WMN6TP is a low power, non-volatile memory device, meaning that it does not require an external power source to maintain its stored data. It is an ideal choice for applications that require low power consumption and minimal set up costs. It is a reliable type of memory for use in various applications, such as embedded systems, automotive, telecommunications, consumer electronics, applications that require a great deal of random access memory (RAM), and even servers.

The device’s working principle is based on the integration of a special type of capacitor and transistor. The capacitors store voltage, while the transistors allow the memory device to be addressed. When a user writes data to the memory, an electrical signal is sent to the capacitors, which stores the data as a binary number. When the user wants to read the data, the stored voltage is read by the transistors and converted into a digital signal.

M95128-WMN6TP features low current consumption, improved signal integrity performance, superior endurance and reliability and fast access time, making it particularly suitable for high-performance applications. Additionally, it offers up to 128 Megabits in a 48-pin TSOP-I package, which is about 20 times more than ordinary DRAMs.

In conclusion, the M95128-WMN6TP is a revolutionary device for use in a variety of applications, from embedded systems and automotive to consumer electronics. Its low-power consumption, reliable data storage, and fast access time make it ideal for any situation that requires fast access to large amounts of data. It is a safe, cost-effective choice for any application requiring dynamic random access memory.

The specific data is subject to PDF, and the above content is for reference

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