M95512-DFCS6TP/K Allicdata Electronics

M95512-DFCS6TP/K Integrated Circuits (ICs)

Allicdata Part #:

497-13615-2-ND

Manufacturer Part#:

M95512-DFCS6TP/K

Price: $ 0.55
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EEPROM 512K SPI 16MHZ 8WLCSP
More Detail: EEPROM Memory IC 512Kb (64K x 8) SPI 16MHz 8-WLCS...
DataSheet: M95512-DFCS6TP/K datasheetM95512-DFCS6TP/K Datasheet/PDF
Quantity: 7500
1 +: $ 0.55000
10 +: $ 0.53350
100 +: $ 0.52250
1000 +: $ 0.51150
10000 +: $ 0.49500
Stock 7500Can Ship Immediately
$ 0.55
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Clock Frequency: 16MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFBGA, WLCSP
Supplier Device Package: 8-WLCSP
Base Part Number: M95512
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a class of storage devices and technologies used to store and recall computer data. One such memory device is the M95512-DFCS6TP/K, a dynamic random access memory (DRAM). This type of DRAM is extensively used in modern electronic equipment.

The M95512-DFCS6TP/K can be used in a wide variety of applications, ranging from telecommunications to embedded systems. It is particularly well-suited for high-speed, low-power applications such as digital audio/video and image processing. Additionally, the M95512-DFCS6TP/K can also be used in applications that require high data transfer rates, such as 3D gaming, multimedia and internet browsing.

The M95512-DFCS6TP/K is based on an advanced triple-cell architecture. Each cell contains two bitlines, two selectors and two sense amplifiers. It is capable of storing up to 8384 bits of data and can simultaneously process up to eight bits of data at any one time. The memory device also features a fast random access time of 15.4 nanoseconds and a fast read access time of 6.4 nanoseconds.

The working principle behind the M95512-DFCS6TP/K is relatively simple. When a voltage is applied to one of the cells, the current that flows through the bitlines creates a magnetic field. This field then changes the polarity of the charge stored on the capacitors, which are connected to the bitlines. The polarity of the charge determines whether the bits of data are a 0 or a 1. The sense amplifiers then sense the change in the current, which is a process known as sensing.

Once the voltage is removed, the memory controller uses the information stored in the bitlines to determine the value of the data stored in the cells. After the data is read, the memory device then refreshes the capacitors, which is accomplished by applying a voltage to the bitlines. This is known as the refresh cycle.

The M95512-DFCS6TP/K is widely used in a variety of industries and applications due to its fast access times, high storage capacity and low power consumption. It is an ideal solution for any application that requires high speed data transfer and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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