M95512-DFDW6TP Allicdata Electronics

M95512-DFDW6TP Integrated Circuits (ICs)

Allicdata Part #:

497-15777-2-ND

Manufacturer Part#:

M95512-DFDW6TP

Price: $ 0.46
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EEPROM 512K SPI 16MHZ 8TSSOP
More Detail: EEPROM Memory IC 512Kb (64K x 8) SPI 16MHz 8-TSSO...
DataSheet: M95512-DFDW6TP datasheetM95512-DFDW6TP Datasheet/PDF
Quantity: 1000
1 +: $ 0.46000
10 +: $ 0.44620
100 +: $ 0.43700
1000 +: $ 0.42780
10000 +: $ 0.41400
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Clock Frequency: 16MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: M95512
Description

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M95512-DFDW6TP is a type of compound nonvolatile memory, which applies unique serial access protocol to the memory array to enhance the performance of memory access and reduce the number of external pin-configurations for flexible design. Implemented with the widely popular standard memory technology, M95512-DFDW6TP is widely used in fields such as medical, power project and portable computers as an effective solution.

The M95512-DFDW6TP memory employs an innovative “same memory” architecture, which enables the storage of data in multiple segments. The operating principle is based on two 64-bit data lines: a primary “write” line and a secondary “read” line. Each data line consists of a 16-bit write data and a 16-bit read data. The read line is used to read the previous data stored in the memory, while the write line is used to store new data in the memory during a write cycle.

The actual M95512-DFDW6TP is comprised of two separate components: a substrate and a set of 16 rows and four columns of integrated passive devices. The substrate includes memory cells and logic elements which are used to manage memory access and control logic. The integrated passive devices are responsible for addressing, data buffering, data storage, and other operations needed to support the M95512-DFDW6TP functionality.

The M95512-DFDW6TP memory operates in two modes: read mode and write mode. In read mode, the memory is configured for sequential data fetching and transmission. During each read cycle, the read and write lines are read from the 4 columns and 16 rows respectively. The 16 rows are read in turn and the data is transmitted to the 16-bit write data line. This data is then transferred from the write line to the read line, and then to the memory controller.

In write mode, the memory transmits the write data from the write line to the memory and stores it in the memory cells. The data is written to the 16 row lines simultaneously, and then read by the controller in the same way as it is in read mode. The write data is thus stored in the memory. Once this process finishes, the memory is then configured to perform read operations.

Using the above technology with its read and write lines, M95512-DFDW6TP can transfer 16-bits of data per cycle, limiting the number of pin configuration required, and allowing memory designers to adopt the memory design within their existing design criteria. This type of memory is used in many applications, such as medical devices, power projects, and portables devices, due to its high performance and efficient design, making it an effective solution.

The specific data is subject to PDF, and the above content is for reference

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