M95512-DRDW3TP/K Integrated Circuits (ICs)

Series:	Automotive, AEC-Q100
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	512Kb (64K x 8)
Clock Frequency:	16MHz
Write Cycle Time - Word, Page:	4ms
Memory Interface:	SPI
Voltage - Supply:	1.8 V ~ 5.5 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP
Base Part Number:	M95512

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M95512-DRDW3TP/K Application Field and Working Principle

Introduction

The M95512-DRDW3TP/K series of memory devices is a non-volatile memory device, designed for use in a wide range of applications. The device provides a standardized interface for connecting to the system and a robust architecture for reliable operation. This article will discuss the application field and working principle of the M95512-DRDW3TP/K memory device.

Application Field

The M95512-DRDW3TP/K series of memory devices are used in a wide range of embedded systems. These systems can range from automotive and industrial equipment, to home appliances and consumer electronics. The device is well suited for storing programs and data for these applications, as it is non-volatile and does not require power to retain its content.In addition to its use in embedded systems, the M95512-DRDW3TP/K series is also used in a wide range of medical devices, such as ventilators, monitors, and defibrillators. The device is well suited for these applications due to its low power consumption, wide operating temperature range, and high levels of reliability.

Working Principle

The M95512-DRDW3TP/K series of memory devices employ a simple three-transistor architecture. Each cell of the device is composed of two select gates and a single access transistor. When the device is powered on, the access transistor is switched on and the select gates are opened. This causes a current to flow through the cell, and the stored data can then be read from the device.The device uses a single-level cell (SLC) architecture, which allows for fast data write and read speeds. The cell contains two storage states for each bit, which increases the data storage density of the device. The device has an operating voltage range of 1.8V to 5.5V, and can be operated from temperatures between -55°C and +125°C.

Conclusion

The M95512-DRDW3TP/K series of memory devices are well suited for a variety of applications. The device provides an inexpensive, low-power solution for storing programs and data in embedded and medical applications. The device employs a simple three-transistor architecture, which provides fast data read and write speeds and high levels of reliability. The device is also capable of operating in a wide range of temperatures and voltages, making it suitable for a variety of applications.

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