M95512-DRMN6TP

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M95512-DRMN6TP is a Serial Peripheral Interface (SPI) FRAM (Ferroelectric Random Access Memory) device. FRAM or Ferroelectric RAM, is a non-volatile memory technology that combines the byte addressing of conventional RAM with the high endurance and low power consumption of EEPROM/Flash. This device is ideal for automotive and M2M applications where low power and endurance are key attributes.

Application Field

M95512-DRMN6TP is often used in medical and automotive applications, particularly in the field of medical imaging. It can store a host of different types of images such as x-ray, MRI, and ultrasound. Another common application is in programmable logic controllers (PLCs) used in industrial settings. PLCs use FRAM to store their programming and data which allows for quick access in an industrial environment.

It is also used in many consumer electronics, such as portable media players and gaming consoles. Because of the low power consumption and extended storage life, FRAM based products are becoming more popular in these areas.

Working Principle

FRAM is a non-volatile memory technology that utilizes a ferroelectric layer, instead of a gate oxide layer to store data bits. The ferroelectric layer acts as a dielectric material, which is sandwiched between two metal plates, a bottom plate and a top plate. As a result, the stored memory state is robust and retains its content, even when power is removed from the device.

When the device is powered up, an electrical field is applied to the two plates, creating two magnetic dipoles with opposite polarity. These dipoles interact with each other to form either a parallel (1) or an antiparallel (0) combination, which defines the stored bit value. Data is read and written directly to the FRAM\'s array, implemented as separate operations that are structurally similar.

M95512-DRMN6TP offers the highest performance and lowest power serial memory technology available. The device utilizes low voltage MOS transistors and operates on a single supply as low as 1.8V. This device is robust and easy to use, which makes it well-suited for a variety of embedded applications.

The device has a capacity of 512K bit and includes several features such as burst and page write, erase, random and sequential read, and support for 16x16 bit matrix addressing. With its fast write and read access, M95512-DRMN6TP is an ideal choice for data logging and other specialized applications. It also features a Data Protection Register which stores up to four user-defined codes for secure identification and authentication.

Conclusion

M95512-DRMN6TP is a non-volatile memory device with a wide range of applications. Automotive and medical imaging are amongst the most popular uses, while it is also a common choice for programmable logic controllers and consumer electronics. The device utilizes a ferroelectric layer instead of a gate oxide layer and operates using power as low as 1.8V. It provides fast write and read access and has a data capacity of 512K bit. It also has several additional features including a Data Protection Register and matrix addressing capabilities. With its low power consumption and extended storage life, M95512-DRNM6TP is an optimal choice for a variety of embedded applications.

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