MALCE11AE3 Allicdata Electronics
Allicdata Part #:

1086-4042-ND

Manufacturer Part#:

MALCE11AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 11V 18.2V CASE-1
More Detail: N/A
DataSheet: MALCE11AE3 datasheetMALCE11AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 18.2V
Supplier Device Package: CASE-1
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 82A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 12.2V
Voltage - Reverse Standoff (Typ): 11V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (transient voltage surge suppressor) diodes serve as a protection tactic for integrated circuits (ICs) against electrical overstress (EOS). When a surge in voltage exceeds the ratings of an IC, the TVS diode prevents destruction to the IC by limiting the spike in voltage and maintaining the power supply at its desired operating value. The MALCE11AE3, a commercially available TVS diode, serves as a prime example of this technology. By using a combination ofavalanche and Zener breakdown, this component can provide enhanced line conditioning in order to prevent EOS. The MALCE11AE3 has a wide variety of applications, making it an ideal choice for many engineers and technicians. This component is exceptionally well-suited for load switching, industrial, and telecom systems, where line conditioning and EOS protection is essential. It is also commonly utilized in the automotive, consumer, and satellite industries, thanks to its relatively easy implementation and compatibility with common layout standards. Customers may choose from a variety of packages and voltage/power levels, allowing for easy selection based on the design parameters of the project.The working principle behind the MALCE11AE3 is grounded in its avalanche and Zener breakdown capabilities. Avalanche breakdown is a phenomena in which a free electron in a semiconductor material is accelerated by an external voltage. This energy causes a breakdown of the material, resulting in an intense burst of electric current. Zener breakdown, on the other hand, occurs when a reverse-biased diode is pushed to the point where the built-up electric field is strong enough to break down the depletion region of the diode. This allows for a unique form of line conditioning which can effectively control voltage transients. When the MALCE11AE3 is deployed, an electrical potential is developed across the device. If a momentary voltage spike exceeds the rated value of the semiconductor, the component’s breakdown will be activated. This causes a low impedance path to be created, which reduces the voltage spike to the desired operating voltage of the circuit. This built-in protection further helps to limit inrush currents, helping to extend the life of the device. When the circuit is deactivated, the component resets and is ready to do its job once again the next time a voltage spike occurs. Overall, the MALCE11AE3 is a reliable and versatile option for protection against EOS and voltage spikes in a variety of different industries. It offers an optimal level of protection with a minimal amount of effort, making it a popular solution for designers and technicians. With its broad selection of power ratings, packages, and configurations, it is sure to become an essential part of the modern electr ical engineer’s tool-kit.

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