MALCE60AE3 Allicdata Electronics

MALCE60AE3 Circuit Protection

Allicdata Part #:

1086-4100-ND

Manufacturer Part#:

MALCE60AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 60V 96.8V CASE-1
More Detail: N/A
DataSheet: MALCE60AE3 datasheetMALCE60AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 96.8V
Supplier Device Package: CASE-1
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 15.5A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 66.7V
Voltage - Reverse Standoff (Typ): 60V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diodes are specifically designed to provide over-voltage protection for various types of electronic equipment. The MALCE60AE3 is a member of the Transient Voltage Suppressor (TVS) family of devices, providing bidirectional over-voltage protection. This device is designed to provide superior performance in a wide variety of applications including electronic organs, televisions, audio equipment, and control circuitry.

The MALCE60AE3 is a P-channel enhancement mode MOSFET in a hermetically sealed SOT-23 package. The MALCE60AE3 has a very low threshold voltage, typically 1.5V, enabling it to detect over-voltage events and thus protect downstream circuits. The device also has two internal diodes, one from the source to the drain, and one from the source to the gate, thus providing bidirectional protection. Additionally, the device features low on-state resistance, high peak current capability, and the ability to dissipate up to 1.3W in avalanche and zener modes.

The MALCE60AE3 is ideal for AC and DC transient voltage protection of I/O interfaces, power bus bars and gate lines, as well as filters to protect downstream circuits. The device provides an additional level of robustness to circuits that must withstand harsh environmental conditions. The device is able to withstand exposure to high levels of shock and vibration, making it ideal for use in military, aerospace, industrial, and automotive applications.

The MALCE60AE3 is capable of handling wide input signals ranging from -45V to +45V in both bipolar and avalanche mode, with a VDE avalanche current rating up to 3A. When the input voltage falls below its threshold voltage, the device will not conduct and will remain in its off-state. This allows the device to resist damage from power surges and ESD events.

The working principle behind the MALCE60AE3 is based on two physical processes. The first process is the forward biasing of the internal diodes, creating a conductive path from the source to the gate and drain terminals. The second process is the avalanche breakdown of the gate-to-drain junction, causing a current flow, which triggers a rapid increase in voltage across the gate-drain junction. This rapidly increases the voltage across the gate-source junction, which then creates a conductive path from the gate to the source terminal.

The MALCE60AE3 is an excellent choice for over-voltage protection of a variety of applications. Its low threshold voltage and low on-state resistance allow it to detect transient events and divert them away from sensitive circuit components. Additionally, its hermetically sealed package makes it an ideal choice for applications that require robust protection in harsh environments. The device is capable of providing voltage protection from -45V to +45V, making it suitable for both AC and DC circuits. Finally, its bidirectional protection capabilities ensure that both positive and negative voltage transients are diverted away from downstream circuitry.

The specific data is subject to PDF, and the above content is for reference

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