MAP6KE15A Allicdata Electronics
Allicdata Part #:

1086-4509-ND

Manufacturer Part#:

MAP6KE15A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 12.8V 21.2V T-18
More Detail: N/A
DataSheet: MAP6KE15A datasheetMAP6KE15A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 21.2V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 28A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 14.3V
Voltage - Reverse Standoff (Typ): 12.8V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS-Diodes (Transient Voltage Suppressors) are semiconductor devices which offer protection to electronic components/equipment from transient overvoltage events. MAP6KE15A is a silicon avalanche diode device in a hermetically sealed ceramic dual-in-line package designed to protect expensive electronic components from damage due to transient overvoltage spikes. It is able to withstand high levels of ESD strikes resulting in long life and high reliability of the part.

MAP6KE15A application field

MAP6KE15A provides leading edge protection by clamping of high voltage transient signals protecting all semiconductor devices at the load side of the protection device. It is mainly used as TVS diode for ESD/EOS protection of data and signal lines, such as for PC card, audio/video equipment, communication systems and measuring instruments. This device also exhibits excellent surge and surge current handling capabilities and excellent clamping performance. It is extremely beneficial for many applications such as telecommunications, automotive circuit protection, general semiconductor protection, and ultra low capacitance line protection.

MAP6KE15A working principle

MAP6KE15A is fabricated with a low voltage PN junction diode, a resonant capacitor as one electrode and a conductive plastic plate containing the other side of the diode electrode. The diode is designed to break down when exposed to surges of additional voltage. The conductive plate helps to spread the current in between the electrodes of the diode. The capacitance between the electrodes helps to absorb voltage from the load side of the device. When the voltage exceeds the peak point the avalanche breakdown starts and the diode quickly runs out of the current by reducing the power. The surge current is then limited through this induced avalanche breakdown.

MAP6KE15A provides a fast response time and low leakage current. It is designed to withstand high levels of ESD strikes. This device also has an excellent pulse handling capability and a wide operating temperature range. The low current leakage and fast response time allows the device to be used in a variety of applications where surge or EOS/ESD Protection is required.

MAP6KE15A provides superior ESD protection, wide operating temperature range, fast response time and low leakage current. This device is ideal for applications that require ESD/EOS protection of data and signal lines, PC card, audio/video equipment, communication systems and measuring instruments. The device is also designed with a low voltage PN junction diode which provides superior surge protection and an excellent clamping performance.

The specific data is subject to PDF, and the above content is for reference

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