MAP6KE56AE3 Allicdata Electronics
Allicdata Part #:

1086-4582-ND

Manufacturer Part#:

MAP6KE56AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 47.8V 77V T-18
More Detail: N/A
DataSheet: MAP6KE56AE3 datasheetMAP6KE56AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 77V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 53.2V
Voltage - Reverse Standoff (Typ): 47.8V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS – diodes (Transient Voltage Suppressors) are implemented in various types of applications for the purpose of protecting the electronic circuit from transient overvoltage events. The MAP6KE56AE3 is an example of a TVS – diode, a device developed by EverTrans Technology to provide overvoltage protection for I/O, high-speed data lines, and telecommunication lines.

The MAP6KE56AE3 is built on a commercially available 6KE56 package, and is designed to protect against electrostatic discharges up to 20 kV, and telecommunication line surges up to 8 kV. The main operational characteristics of the MAP6KE56AE3 are a breakdown voltage of 6.4V, an operating current of 55 mA and a capacitance of 1.2 pF. Furthermore, the device is configured in a common-cathode configuration for superior protection.

The MAP6KE56AE3 has a wide range of applications in various industries, including automotive, telecommunications, data and signal protection, as well as consumer electronics. The device is ideal for applications such as I/O protection, high-speed data lines, and telecommunications. The device is also perfect for protection in both AC and DC circuits due to its low capacitance values.

The MAP6KE56AE3\'s protection mechanism is based on avalanche breakdown, which is a phenomenon occurring when the electric field in the device reaches above a certain threshold value, allowing the current to avalanche directly to the junction of the diode. This process is triggered by an overvoltage event, at which point the MAP6KE56AE3 will absorb the energy of the surge and prevent it from propagating further into the circuit.

In addition to providing overvoltage protection, the MAP6KE56AE3 also has other beneficial features. The device is self-regulating, meaning that it can provide the necessary protection level without any external control. The device is also bidirectional, allowing it to absorb energy from both polarities of the surge. Furthermore, the device is fast acting, with a response time of less than 1 nanosecond, making it perfect for applications that require fast protection.

Overall, the MAP6KE56AE3 is a valuable device for protecting sensitive electronic systems from transient overvoltage events. The device is built on a widely available 6KE56 package, and is configured in a common-cathode configuration for superior protection. Furthermore, the device is self-regulating, bidirectional, and fast acting, making it ideal for a wide range of applications in various industries.

The specific data is subject to PDF, and the above content is for reference

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