MAP6KE160CAE3

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MAP6KE160CAE3 is a TVS-Diodes type semiconductor device used predominantly in the protection of circuit boards from damaging electrostatic discharges. It is comprised of a Zener diode connected to a MOSFET in a single package. The device serves as a voltage limiter. Both low voltage and high voltage applications can be covered with the MAP6KE160CAE3.

The MAP6KE160CAE3 is ideal for applications requiring tightly controlled ESD protection. It is a one-device solution featuring an avalanche breakdown voltage suited for high voltage (over 16V) ESD protection with low clamp voltage and low leakage currents. The easy-to-use integrated MOSFET structure reduces circuit complexity for the engineer. The device utilizes a high-speed SCR or Zener diode based clamp mechanism to provide maximum ESD protection. The integrated device is able to achieve very fast peak response times with consistent performance.

The MAP6KE160CAE3 is particularly suitable for SMBus and I2C protection and other high speed serial ports. It can also be used in most digital and analog signal lines as a low capacitance protection device. It has low insertion loss and minimal effect on signal integrity in accordance with industrial standard. By replacing an external Zener diode with the integrated MAP6KE160CAE3, fewer components and better circuit protection is achieved.

Compared with a normal TVS-diode, the MAP6KE160CAE3 exhibits improved ESD protection performance and shorter response time. It has high level of functionality and compact design, which reduces circuit size, making it attractive for ESD protection in small form factor products. The device has minimal leakage current of less than 200nA, ensuring the device meets the low leakage current requirements in various EMC standards.

The working principle of the MAP6KE160CAE3 is similar to that of normal TVS-diode, however it incorporates the addition of a MOSFET to reduce response time and minimize power loss. Upon the occurrence of an ESD induced voltage spike, the device acts as a low capacitance, ultra-low leakage current ESD protection solution. The avalanche breakdown voltage of the device is high enough to protect against ESD up to the standard required levels and the ESD protection is provided through the integrated high-speed SCR (Silicon Controlled Rectifier) without the need for any external components. The integrated MOSFET has a low on-resistance that allows it to switch on and off quickly, reducing the clamping voltage across the device significantly. It also minimizes the power loss when a surge is detected.

In summary, MAP6KE160CAE3 is an ideal solution for ESD protection in a wide range of applications. It incorporates a fast response time and an improved ESD protection level compared to traditional TVS-diodes. It meets a variety of industrial EMC standards, providing an all-in-one ESD protection solution in a small packages. MAP6KE160CAE3 ensures a robust protection when used correctly.

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