
Allicdata Part #: | 1086-4580-ND |
Manufacturer Part#: |
MAP6KE51CAE3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 43.6V 70.1V T-18 |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 70.1V |
Supplier Device Package: | T-18 |
Package / Case: | T-18, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 8.6A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 48.5V |
Voltage - Reverse Standoff (Typ): | 43.6V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS (Transient Voltage Suppressors) diodes are widely used components for protecting vulnerable electronic devices against over-voltage transients. As each device has its own features, TVS diodes can support a wide range of applications, from consumer electronics to industrial or automotive fields. The MAP6KE51CAE3 is a TVS diode commonly used in these cases. It is a uni-directional, low capacitance electrostatic discharge protection device. This article will explore the MAP6KE51CAE application field and the working principle in detail.
The MAP6KE51CAE3 has been developed to have a low leakage current and hi-temperature operation. Thanks to its high power capability, this TVS device is widely used for ±15kV ESD protection to protect CMOS, ASIC, and other sensitive micro-circuits from damage. It also meets UL flammability 94V-0 and the high-temperature requirements up to 150°C. All these features make the MAP6KE51CAE3 suitable for automotive applications, such as lighting systems, powertrain control units, key fob remote sensors, radio navigation systems, emergency fuel shut-off and hybrid/electric drive control units.
Apart from automotive applications, the MAP6KE51CAE3 can be used for a range of industrial applications. In fact, it is suitable for protection of industrial control units, process controllers, home appliances, computer peripherals, telecom and audio-visual equipment, power supplies, and many more. It is also widely used in consumer electronics applications, including PCs, laptops, tablets, and smartphones.
The working principle of the MAP6KE51CAE3 device is not complicated. In essence, it consists of two PN junction diodes connected in parallel, forming a P-I-N junction that operates as a voltage-dependent switch. The P-I-N junction is biased in its off-state, resulting in no current flow across the two diodes. When the voltage across the diode exceeds the breakdown voltage of the P-I-N junction, the P-I-N junction starts to conduct current. This enabled the device to clamp transient voltages by eliminating the dangerous levels of voltage present in the device.
The MAP6KE51CAE3 is equipped with a low capacitance ESD protection circuit which provides enhanced protection from electrostatic discharges. This is achieved by adding a low capacitance RF filter, which decreases the amount of noise that can pass through the device. As a result, the device is able to protect against ESD strikes, which can exceed 15kV.
In conclusion, the MAP6KE51CAE3 is a useful TVS diode that offers protection from transient voltage and electrostatic discharge. It is suitable for a range of applications, including automotive, industrial, and consumer electronics. Its working principle is based on a P-I-N junction which operates as a voltage-dependent switch, enabling the device to eliminate dangerous levels of voltage. The device is equipped with a low capacitance ESD protection circuit which helps to further protect against electrostatic discharges.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MAP6KE200A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
MAP6KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE27A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V T-1... |
MAP6KE15CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
MAP6KE16CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
MAP6KE18CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
MAP6KE18AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
MAP6KE22AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V T-1... |
MAP6KE27CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V T-1... |
MAP6KE120AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE47CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.2V 64.8V T-1... |
MAP6KE51CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 43.6V 70.1V T-1... |
MAP6KE7.5CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
MAP6KE11AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE200AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
MAP6KE170A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 145V 234V T-18 |
MAP6KE12A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE110AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MAP6KE30A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 25.6V 41.4V T-1... |
MAP6KE18CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
MAP6KE15A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
MAP6KE62CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 53V 85V T-18 |
MAP6KE16CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
MAP6KE120CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE68A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 58.1V 92V T-18 |
MAP66006 | Laird Techno... | 0.08 $ | 1000 | ANT ASSY CARRIER MOLD BLA... |
MAP6KE62AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 53V 85V T-18 |
MAP6KE30AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 25.6V 41.4V T-1... |
MAP6KE56CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 47.8V 77V T-18 |
MAP6KE16A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
MAP6KE43CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 36.8V 59.3V T-1... |
MAP6KE9.1CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.78V 13.4V T-1... |
MAP6KE200CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
MAP6KE15AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
MAP6KE9.1A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.78V 13.4V T-1... |
MAP6KE130AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MAP6KE24AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V T-1... |
MAP6KE7.5A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
MAP6KE75AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 64.1V 103V T-18 |
MAP6KE91CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
TVS DIODE 31V 56.4V DO214AB

TVS DIODE 8.5V 13.5V DO219AB

TVS DIODE 350V 690V CASE 5A

TVS DIODE 170V 334V CASE 5A

TVS DIODE 7.02V 12.1V T-18

TVS DIODE 78V 126V DO204AL
