MAP6KE20CAE3 Allicdata Electronics
Allicdata Part #:

1086-4540-ND

Manufacturer Part#:

MAP6KE20CAE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 17.1V 27.7V T-18
More Detail: N/A
DataSheet: MAP6KE20CAE3 datasheetMAP6KE20CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 27.7V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 22A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 19V
Voltage - Reverse Standoff (Typ): 17.1V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diodes are an important element in high voltage circuits used in many applications such as industrial controls, motor control, medical equipment, and automotive electronics. The MAP6KE20CAE3 is one such diode. It is a silicon transient voltage suppressor (TVS). The MAP6KE20CAE3 can protect circuits from damaging voltage spikes, enabling designers to increase reliability and reduce cost.

The MAP6KE20CAE3 is an integrated, single-stage TVS diode with an ESD protection rating of up to 20kV, making it suitable for applications with higher voltage ratings. This diode has an integrated ESD protection circuit and a voltage clamping capability. It also features an ultra-low parasitic capacitance that meets International Electrotechnical Commission (IEC) 61000-6-2 surge requirements. This low capacitance allows for lower ESD clamping voltages, which improves the performance of the diode.

The working principle of the MAP6KE20CAE3 is based on the PN junction. PN junction is a diode junction between positive and negative semiconductor conductors. When a voltage is applied in forward bias, current flows in the forward direction. In reverse bias, the current is blocked. The TVS diode works in the same way. When a voltage is applied in the forward direction, the diode’s PN junction provides a low resistance path for the current and the diode remains in the forward biased region. In the event of an overvoltage, the diode switches to reverse bias and the PN junction behaves like an open circuit, causing the current to be blocked.

The MAP6KE20CAE3 can be used in high voltage applications such as ESD protection, AC line filtering, and IEC 61000-6-3 lightning protection. It can also be used in DC power protection applications, such as overvoltage protection and EMI suppression. The diode features a fast switching response time and a low capacitance that helps reduce the EMI/RFI generated by the switching device. In addition, its high surge capability ensures that it can withstand high voltage surge events without causing damage.

The MAP6KE20CAE3 is a reliable, cost-effective solution for high voltage applications. It is robust, has a low capacitance, and can withstand high surge events. It provides reliable ESD and overvoltage protection, as well as EMI/RFI suppression. The Diode is simple to use and is well-suited for all of today’s high-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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