MAP6KE36A Allicdata Electronics
Allicdata Part #:

1086-4561-ND

Manufacturer Part#:

MAP6KE36A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 30.8V 49.9V T-18
More Detail: N/A
DataSheet: MAP6KE36A datasheetMAP6KE36A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 49.9V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 12A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 34.2V
Voltage - Reverse Standoff (Typ): 30.8V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MAP6KE36A is a type of transient voltage suppression (TVS) diode. It is designed to offer protection from electrostatic discharge and transient voltage surge events. TVS diodes are often used in consumer electronics and industrial equipment to protect sensitive components from power failure or spikes in voltage. The MAP6KE36A is an integral part of any system that needs to be protected from lightning (electrical arcs and static electricity) and other transient events.

The MAP6KE36A is a Zener diode that offers high energy absorption and low clamping voltage. The device offers a fast response time of less than 10 nanoseconds and is designed to handle transient voltages of up to 36V. It is rated for a reverse breakdown voltage of 32V and a power dissipation of 24 watts. The MAP6KE36A is also very temperature tolerant, with an operating junction temperature range of -35°C to +85°C.

The device can be used in applications such as automotive electronics, power supplies, and telecommunications. It can also be used in a variety of other consumer electronics, including computers, digital cameras, and cell phones. The MAP6KE36A provides protection for sensitive components from electrostatic discharge (ESD), electrical overstress (EOS), and electrical fast transients (EFT).

The TVS diode is constructed from a substrate material that consists of a highly doped semiconductor material such as silicon. An ionized impurity is injected into the semiconductor material to form a region where the polarity of the electric field is reversed. This reversed electric field creates a diode junction. External electrical fields can cause a large difference in the charge carriers in the diode, allowing them to flow from the negatively charged region to the positively charged region. This flow of charge, known as reverse breakdown, is what allows the diode to suppress or absorb the transient voltage and protect the device.

In applications where the MAP6KE36A is used, the protective device is connected across the power rails of the circuit. In this configuration, it will absorb transient voltages that may be present on the power rail or lines. During an event, the diode will draw current, which will be dissipated as heat due to the device\'s high power dissipation rating.

The MAP6KE36A is an ideal solution for protecting sensitive components from voltage transients such as lightning or other electrical arcs and static electricity. With its low clamping voltage, fast response time, and high power dissipation, it is an effective solution for protecting a wide range of consumer and industrial equipment from damaging voltage surges.

The specific data is subject to PDF, and the above content is for reference

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