MAP6KE51AE3 Allicdata Electronics
Allicdata Part #:

1086-4578-ND

Manufacturer Part#:

MAP6KE51AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 43.6V 70.1V T-18
More Detail: N/A
DataSheet: MAP6KE51AE3 datasheetMAP6KE51AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 70.1V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 8.6A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 48.5V
Voltage - Reverse Standoff (Typ): 43.6V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Introduction to MAP6KE51AE3

MAP6KE51AE3 is a TVS Diode manufactured by ON Semiconductor. It is designed for use in high speed data line protection applications. The MAP6KE51AE3 is ideal for protecting communication lines in cell phones, tablets, and other digital equipment from high voltage transients, ESD, and other electrical events. This device is also suitable for protection of automotive infotainment and control systems.

Application Field

MAP6KE51AE3 is an excellent choice for high speed data line protection applications. It has a low incremental surge resistance and a low clamping voltage. It is suitable for protecting high speed communication lines from over-voltage transients, ESD strikes, and other electrical events.

The MAP6KE51AE3 is suitable for use in cell phones, tablets, automotive systems, portable device charging, and power management circuits. It is also suitable for protecting against lightning induced fast transient overvoltage. This TVS Diode can be used in environmental testing such as ESD tests, surge tests, and lightning pulse tests.

Working Principle

The MAP6KE51AE3 is an unidirectional Silicon Avalanche Diode. It is designed to protect sensitive components from high voltage transients and ESD. The device operates by quickly clamping transient overvoltages to a safe level. The MAP6KE51AE3 has a low incremental surge resistance of 0.30 Ohm. This reduces the total clamping force on the protected device and prevents secondary effects such as heating and signal integrity degradation.

The MAP6KE51AE3 is also designed to protect against ESD. It has an ESD protection rating of 15kV contact discharge. This enables it to withstand ESD strikes up to 15kV without damaging the protected device.

The MAP6KE51AE3 has an external over-temperature protection feature which allows it to shut down in case of a thermal overload. This prevents the device from overheating and damaging the circuit.

Conclusion

The MAP6KE51AE3 is a TVS Diode manufactured by ON Semiconductor. It is designed for use in high speed data line protection applications such as cell phones, tablets, automotive systems, portable device charging, and power management circuits. It has a low incremental surge resistance and a low clamping voltage which makes it ideal for protecting communication lines from high voltage transients and ESD. The MAP6KE51AE3 also has an external over-temperature protection feature which allows it to shut down in case of thermal overload. This helps prevent the device from damaging the protected circuit.

The specific data is subject to PDF, and the above content is for reference

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