| Allicdata Part #: | 1086-4578-ND |
| Manufacturer Part#: |
MAP6KE51AE3 |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 43.6V 70.1V T-18 |
| More Detail: | N/A |
| DataSheet: | MAP6KE51AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 1 +: | 0.00000 |
| Voltage - Clamping (Max) @ Ipp: | 70.1V |
| Supplier Device Package: | T-18 |
| Package / Case: | T-18, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 8.6A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 48.5V |
| Voltage - Reverse Standoff (Typ): | 43.6V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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Introduction to MAP6KE51AE3
MAP6KE51AE3 is a TVS Diode manufactured by ON Semiconductor. It is designed for use in high speed data line protection applications. The MAP6KE51AE3 is ideal for protecting communication lines in cell phones, tablets, and other digital equipment from high voltage transients, ESD, and other electrical events. This device is also suitable for protection of automotive infotainment and control systems.
Application Field
MAP6KE51AE3 is an excellent choice for high speed data line protection applications. It has a low incremental surge resistance and a low clamping voltage. It is suitable for protecting high speed communication lines from over-voltage transients, ESD strikes, and other electrical events.
The MAP6KE51AE3 is suitable for use in cell phones, tablets, automotive systems, portable device charging, and power management circuits. It is also suitable for protecting against lightning induced fast transient overvoltage. This TVS Diode can be used in environmental testing such as ESD tests, surge tests, and lightning pulse tests.
Working Principle
The MAP6KE51AE3 is an unidirectional Silicon Avalanche Diode. It is designed to protect sensitive components from high voltage transients and ESD. The device operates by quickly clamping transient overvoltages to a safe level. The MAP6KE51AE3 has a low incremental surge resistance of 0.30 Ohm. This reduces the total clamping force on the protected device and prevents secondary effects such as heating and signal integrity degradation.
The MAP6KE51AE3 is also designed to protect against ESD. It has an ESD protection rating of 15kV contact discharge. This enables it to withstand ESD strikes up to 15kV without damaging the protected device.
The MAP6KE51AE3 has an external over-temperature protection feature which allows it to shut down in case of a thermal overload. This prevents the device from overheating and damaging the circuit.
Conclusion
The MAP6KE51AE3 is a TVS Diode manufactured by ON Semiconductor. It is designed for use in high speed data line protection applications such as cell phones, tablets, automotive systems, portable device charging, and power management circuits. It has a low incremental surge resistance and a low clamping voltage which makes it ideal for protecting communication lines from high voltage transients and ESD. The MAP6KE51AE3 also has an external over-temperature protection feature which allows it to shut down in case of thermal overload. This helps prevent the device from damaging the protected circuit.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MAP6KE160AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE33AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 28.2V 45.7V T-1... |
| MAP6KE150CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
| MAP6KE39CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 33.3V 53.9V T-1... |
| MAP6KE20AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 17.1V 27.7V T-1... |
| MAP6KE10A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
| MAP6KE170CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 145V 234V T-18 |
| MAP6KE11CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
| MAP6KE56AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 47.8V 77V T-18 |
| MAP6KE15CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
| MAP6KE16CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
| MAP6KE18CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
| MAP6KE160CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE160CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE36CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V T-1... |
| MAP6KE7.5CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
| MAP6KE8.2A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.02V 12.1V T-1... |
| MAP6KE10AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
| MAP6KE56A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 47.8V 77V T-18 |
| MAP6KE91A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
| MAP6KE75CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 64.1V 103V T-18 |
| MAP6KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
| MAP6KE36AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V T-1... |
| MAP6KE82AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 70.1V 113V T-18 |
| MAP6KE91AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
| MAP6KE22AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V T-1... |
| MAP6KE27CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V T-1... |
| MAP6KE130CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
| MAP6KE100CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
| MAP6KE110CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
| MAP6KE120AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
| MAP6KE47CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.2V 64.8V T-1... |
| MAP6KE51CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 43.6V 70.1V T-1... |
| MAP6KE7.5CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
| MAP6KE100CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
| MAP6KE24CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V T-1... |
| MAP6KE200A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
| MAP6KE16AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
| MAP6KE6.8CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.8V 10.5V T-18 |
| MAP6KE18AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MAP6KE51AE3 Datasheet/PDF