| Allicdata Part #: | 1086-4590-ND |
| Manufacturer Part#: |
MAP6KE62AE3 |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 53V 85V T-18 |
| More Detail: | N/A |
| DataSheet: | MAP6KE62AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 1 +: | 0.00000 |
| Voltage - Clamping (Max) @ Ipp: | 85V |
| Supplier Device Package: | T-18 |
| Package / Case: | T-18, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 7.1A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 58.9V |
| Voltage - Reverse Standoff (Typ): | 53V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS - Diodes are widely used in the protection of electrical/electronic devices from transient over-voltage. The MAP6KE62AE3 is a unidirectional and bidirectional suppressor designed to protect high speed data circuits from ESD, electrical fast transients (EFTs) and lightning induced surges. The TVS diode is also known as the transil diode, the transient voltage suppression diode, and the suppressor diode.
The MAP6KE62AE3 TVS diode is designed to protect high speed data lines from electrostatic discharge (ESD), voltage transients, electrical fast transients (EFTs) and lightning induced surges. This diode has a peak clamping voltage of 24 volts at Ipp=7.1A for unidirectional type and 12 volts at Ipp=7.1A for bidirectional type. It also has an excellent clamping capability (Vc=21.8V@Ipp=5.9A 8/20us waveform unidirectional).
The MAP6KE62AE3 diode is suitable for high speed data lines such as HDMI, USB 3.0 and USB 2.0 that are used to transmit digital signals such as audio, video and data. The high speed data lines require the protection of TVS diodes due to their sensitivity to over-voltage transients caused by ESD, EFTs and lightning surges. The TVS diode provides protection to the data lines from such over-voltage transients by clamping the voltage below a safe level.
The working principle of the MAP6KE62AE3 is based on the avalanche breakdown mechanism. In the avalanche breakdown process, an electric field is created in the junction region of the diode when a voltage higher than the diode\'s breakdown voltage is applied. This electric field gives rise to the impact ionization process in which electrons and holes are accelerated by the electric field and then collide with atoms in the crystal lattice, causing them to be knocked off and create electron-hole pairs. These electron-hole pairs cause the current to increase exponentially, thus producing the avalanche breakdown effect in the diode.
The avalanche breakdown effect in the diode ensures that the voltage across the diode does not exceed a certain safe level. This is why the MAP6KE62AE3 TVS diode is used to protect high speed data lines from over-voltage transients. The diode has an excellent clamping capability and a peak clamping voltage of 24 volts for unidirectional type and 12 volts for bidirectional type.
In summary, the MAP6KE62AE3 TVS diode is designed to protect high speed data lines from over-voltage transients caused by ESD, EFTs and lightning surges. The diode has an excellent clamping capability and a peak clamping voltage of 24 volts for unidirectional type and 12 volts for bidirectional type. The diode works by using the avalanche breakdown mechanism, which ensures that the voltage across the diode does not exceed a set level.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MAP6KE160AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE33AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 28.2V 45.7V T-1... |
| MAP6KE150CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
| MAP6KE39CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 33.3V 53.9V T-1... |
| MAP6KE20AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 17.1V 27.7V T-1... |
| MAP6KE10A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
| MAP6KE170CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 145V 234V T-18 |
| MAP6KE11CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
| MAP6KE56AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 47.8V 77V T-18 |
| MAP6KE15CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
| MAP6KE16CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
| MAP6KE18CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
| MAP6KE160CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE160CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE36CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V T-1... |
| MAP6KE7.5CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
| MAP6KE8.2A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.02V 12.1V T-1... |
| MAP6KE10AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
| MAP6KE56A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 47.8V 77V T-18 |
| MAP6KE91A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
| MAP6KE75CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 64.1V 103V T-18 |
| MAP6KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
| MAP6KE36AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V T-1... |
| MAP6KE82AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 70.1V 113V T-18 |
| MAP6KE91AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
| MAP6KE22AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V T-1... |
| MAP6KE27CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V T-1... |
| MAP6KE130CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
| MAP6KE100CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
| MAP6KE110CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
| MAP6KE120AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
| MAP6KE47CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.2V 64.8V T-1... |
| MAP6KE51CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 43.6V 70.1V T-1... |
| MAP6KE7.5CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
| MAP6KE100CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
| MAP6KE24CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V T-1... |
| MAP6KE200A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
| MAP6KE16AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
| MAP6KE6.8CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.8V 10.5V T-18 |
| MAP6KE18AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MAP6KE62AE3 Datasheet/PDF