MAP6KE62AE3 Allicdata Electronics
Allicdata Part #:

1086-4590-ND

Manufacturer Part#:

MAP6KE62AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 53V 85V T-18
More Detail: N/A
DataSheet: MAP6KE62AE3 datasheetMAP6KE62AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 85V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.1A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 58.9V
Voltage - Reverse Standoff (Typ): 53V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are widely used in the protection of electrical/electronic devices from transient over-voltage. The MAP6KE62AE3 is a unidirectional and bidirectional suppressor designed to protect high speed data circuits from ESD, electrical fast transients (EFTs) and lightning induced surges. The TVS diode is also known as the transil diode, the transient voltage suppression diode, and the suppressor diode.

The MAP6KE62AE3 TVS diode is designed to protect high speed data lines from electrostatic discharge (ESD), voltage transients, electrical fast transients (EFTs) and lightning induced surges. This diode has a peak clamping voltage of 24 volts at Ipp=7.1A for unidirectional type and 12 volts at Ipp=7.1A for bidirectional type. It also has an excellent clamping capability (Vc=21.8V@Ipp=5.9A 8/20us waveform unidirectional).

The MAP6KE62AE3 diode is suitable for high speed data lines such as HDMI, USB 3.0 and USB 2.0 that are used to transmit digital signals such as audio, video and data. The high speed data lines require the protection of TVS diodes due to their sensitivity to over-voltage transients caused by ESD, EFTs and lightning surges. The TVS diode provides protection to the data lines from such over-voltage transients by clamping the voltage below a safe level.

The working principle of the MAP6KE62AE3 is based on the avalanche breakdown mechanism. In the avalanche breakdown process, an electric field is created in the junction region of the diode when a voltage higher than the diode\'s breakdown voltage is applied. This electric field gives rise to the impact ionization process in which electrons and holes are accelerated by the electric field and then collide with atoms in the crystal lattice, causing them to be knocked off and create electron-hole pairs. These electron-hole pairs cause the current to increase exponentially, thus producing the avalanche breakdown effect in the diode.

The avalanche breakdown effect in the diode ensures that the voltage across the diode does not exceed a certain safe level. This is why the MAP6KE62AE3 TVS diode is used to protect high speed data lines from over-voltage transients. The diode has an excellent clamping capability and a peak clamping voltage of 24 volts for unidirectional type and 12 volts for bidirectional type.

In summary, the MAP6KE62AE3 TVS diode is designed to protect high speed data lines from over-voltage transients caused by ESD, EFTs and lightning surges. The diode has an excellent clamping capability and a peak clamping voltage of 24 volts for unidirectional type and 12 volts for bidirectional type. The diode works by using the avalanche breakdown mechanism, which ensures that the voltage across the diode does not exceed a set level.

The specific data is subject to PDF, and the above content is for reference

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