MAP6KE68CAE3

MAP6KE68CAE3, which belongs to the television surge-protection (TVS) diode, is a size-reduced device with the advanced ESD protection technology. It effectively suppresses the surge impact and thereby helps prolong the life of microelectronic devices. In today\'s world, with pervasive electronics, it becomes increasingly important to protect electronics from the harm of electrostatic charges and surges. In order to meet the demand from the ubiquity of electronic products, TVS technology is widely used in the industries of automotive, aerospace, smartphone, tablets, consumer electronics and others.

MAP6KE68CAE3 is a dual diode that has two individual TVS diodes, designated as MAP6KE68CAE3-1 and MAP6KE68CAE3-2. Each diode is independently rated to dissipate away electrostatic surge and reverse current. When the device is adequately powered, current pulses generated by ESD around the device is clamped to the reverse bias breakdown voltage of either diode or whatever voltage is lower of the two, thereby protecting the circuit from excessive current.

MAP6KE68CAE3 also makes use of the reverse-bias breakdown voltage feature. Reverse bias breakdown voltage is the voltage at which the diode allows current to flow in the reverse direction. This feature enables the TVS diode to withstand high electrostatic surge voltage as well as reverse current. Once the voltage on either diode exceeds the reverse-bias breakdown voltage of either diode, the current pulses generated by ESD around the device is clamped to the reverse-bias breakdown voltage of either diode or whichever voltage is lower of the two.

The working principle of the MAP6KE68CAE3 is based on its two individual TVS diodes. In normal diodes, current passes through the diode when forward bias voltage is applied to the terminals. In MAP6KE68CAE3, current pulse generated by ESD on either diode is clamped to the reverse-bias breakdown voltage of either diode, or whichever voltage is lower of the two, rather than passing through the diode. In this way, the device protects the circuit from excessive current.

The MAP6KE68CAE3 is widely used in different application fields in order to protect electronic devices from electrostatic discharge (ESD) and other overvoltage conditions. It is widely used in the automotive and aerospace industries, as well as consumer electronics, tablets, and smartphones. It also finds application in industrial process control, military and medical devices. In automotive and aerospace industries, MAP6KE68CAE3 is used in a variety of sensors, microcontrollers, and other electronic hardware. In smartphones, tablets and consumer electronics, it is used to protect delicate circuitry from the considerable higher voltage of external ports and connections.

With the surge in the use of electronics thereby increasing the demand for protection from ESD, the MAP6KE68CAE3 provides an effective solution for protection from high electrostatic surge voltages and reverse current. It is suitable for small-sized applications due to its size-reduced design and is used to prevent the malfunction of circuits caused by the surge pulses.

MAP6KE160AE3	Microsemi Co...	0.0 $	1000	TVS DIODE 136V 219V T-18
MAP6KE33AE3	Microsemi Co...	0.0 $	1000	TVS DIODE 28.2V 45.7V T-1...
MAP6KE150CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 128V 207V T-18
MAP6KE39CA	Microsemi Co...	0.0 $	1000	TVS DIODE 33.3V 53.9V T-1...
MAP6KE20AE3	Microsemi Co...	0.0 $	1000	TVS DIODE 17.1V 27.7V T-1...
MAP6KE10A	Microsemi Co...	0.0 $	1000	TVS DIODE 8.55V 14.5V T-1...
MAP6KE170CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 145V 234V T-18
MAP6KE11CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 9.4V 15.6V T-18
MAP6KE56AE3	Microsemi Co...	0.0 $	1000	TVS DIODE 47.8V 77V T-18
MAP6KE15CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 12.8V 21.2V T-1...
MAP6KE16CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 13.6V 22.5V T-1...
MAP6KE18CA	Microsemi Co...	0.0 $	1000	TVS DIODE 15.3V 25.2V T-1...
MAP6KE160CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 136V 219V T-18
MAP6KE160CA	Microsemi Co...	0.0 $	1000	TVS DIODE 136V 219V T-18
MAP6KE36CA	Microsemi Co...	0.0 $	1000	TVS DIODE 30.8V 49.9V T-1...
MAP6KE7.5CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 6.4V 11.3V T-18
MAP6KE8.2A	Microsemi Co...	0.0 $	1000	TVS DIODE 7.02V 12.1V T-1...
MAP6KE10AE3	Microsemi Co...	0.0 $	1000	TVS DIODE 8.55V 14.5V T-1...
MAP6KE56A	Microsemi Co...	0.0 $	1000	TVS DIODE 47.8V 77V T-18
MAP6KE91A	Microsemi Co...	0.0 $	1000	TVS DIODE 77.8V 125V T-18
MAP6KE75CA	Microsemi Co...	0.0 $	1000	TVS DIODE 64.1V 103V T-18
MAP6KE120CA	Microsemi Co...	0.0 $	1000	TVS DIODE 102V 165V T-18
MAP6KE36AE3	Microsemi Co...	0.0 $	1000	TVS DIODE 30.8V 49.9V T-1...
MAP6KE82AE3	Microsemi Co...	0.0 $	1000	TVS DIODE 70.1V 113V T-18
MAP6KE91AE3	Microsemi Co...	0.0 $	1000	TVS DIODE 77.8V 125V T-18
MAP6KE22AE3	Microsemi Co...	0.0 $	1000	TVS DIODE 18.8V 30.6V T-1...
MAP6KE27CA	Microsemi Co...	0.0 $	1000	TVS DIODE 23.1V 37.5V T-1...
MAP6KE130CA	Microsemi Co...	0.0 $	1000	TVS DIODE 111V 179V T-18
MAP6KE100CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 85.5V 137V T-18
MAP6KE110CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 94V 152V T-18
MAP6KE120AE3	Microsemi Co...	0.0 $	1000	TVS DIODE 102V 165V T-18
MAP6KE47CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 40.2V 64.8V T-1...
MAP6KE51CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 43.6V 70.1V T-1...
MAP6KE7.5CA	Microsemi Co...	0.0 $	1000	TVS DIODE 6.4V 11.3V T-18
MAP6KE100CA	Microsemi Co...	0.0 $	1000	TVS DIODE 85.5V 137V T-18
MAP6KE24CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 20.5V 33.2V T-1...
MAP6KE200A	Microsemi Co...	0.0 $	1000	TVS DIODE 171V 274V T-18
MAP6KE16AE3	Microsemi Co...	0.0 $	1000	TVS DIODE 13.6V 22.5V T-1...
MAP6KE6.8CAE3	Microsemi Co...	0.0 $	1000	TVS DIODE 5.8V 10.5V T-18
MAP6KE18AE3	Microsemi Co...	0.0 $	1000	TVS DIODE 15.3V 25.2V T-1...