| Allicdata Part #: | 1086-4613-ND |
| Manufacturer Part#: |
MAP6KE9.1A |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 7.78V 13.4V T-18 |
| More Detail: | N/A |
| DataSheet: | MAP6KE9.1A Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 1 +: | 0.00000 |
| Voltage - Clamping (Max) @ Ipp: | 13.4V |
| Supplier Device Package: | T-18 |
| Package / Case: | T-18, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 45A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 8.65V |
| Voltage - Reverse Standoff (Typ): | 7.78V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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A TVS diode is an electronic component designed to protect a circuit from high voltage or electrostatic discharge (ESD). The MAP6KE9.1A, from its name, is a specific Samsung-made TVS diode. This type of diode is mainly used to protect electronic products or systems from ESD related damages. In this article, the application field and working principle of the MAP6KE9.1A will be discussed.
Application field of MAP6KE9.1A
The MAP6KE9.1A is an electrostatic discharge protection device that can be widely used in different areas. The most common applications are:
- Automotive ignition systems.
- Computers and other electronic products.
- Industrial control devices.
- Medical instruments and equipment.
- Communication systems and networks.
In general, the MAP6KE9.1A can be used in various products and systems as a protection device against ESD and other high voltage or transient events. It is suitable for both consumer electronics and industrial systems.
Working Principle of MAP6KE9.1A
The MAP6KE9.1A is made up of two elements: a silicon diode and an avalanche diode. The silicon diode rapidly conducts initial ESD pulses from the protective signal path to ground, while the avalanche diode is used as the main ESD protection device. Together, they form an effective circuit that provides the highest level of protection from ESD. When an abnormal high voltage is detected, both diodes will quickly clamp the voltage level to protect the circuit.
The MAP6KE9.1A also has a high surge capability. This means that it can conduct ESD pulses with peak currents that are much larger than nominal pulses. In addition, it has low leakage current and is able to handle a wide temperature range, ranging from -55℃ to 175℃.
Conclusion
The MAP6KE9.1A is a type of TVS diode manufactured by Samsung, specifically designed for ESD protection. It is suitable for a wide range of applications and offers a high level of protection from transient over-voltage events. The device is made up of two elements: a silicon diode and an avalanche diode, which work together to provide superior protection from ESD and transient surges.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MAP6KE160AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE33AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 28.2V 45.7V T-1... |
| MAP6KE150CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
| MAP6KE39CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 33.3V 53.9V T-1... |
| MAP6KE20AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 17.1V 27.7V T-1... |
| MAP6KE10A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
| MAP6KE170CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 145V 234V T-18 |
| MAP6KE11CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
| MAP6KE56AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 47.8V 77V T-18 |
| MAP6KE15CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
| MAP6KE16CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
| MAP6KE18CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
| MAP6KE160CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE160CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE36CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V T-1... |
| MAP6KE7.5CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
| MAP6KE8.2A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.02V 12.1V T-1... |
| MAP6KE10AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
| MAP6KE56A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 47.8V 77V T-18 |
| MAP6KE91A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
| MAP6KE75CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 64.1V 103V T-18 |
| MAP6KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
| MAP6KE36AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V T-1... |
| MAP6KE82AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 70.1V 113V T-18 |
| MAP6KE91AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
| MAP6KE22AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V T-1... |
| MAP6KE27CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V T-1... |
| MAP6KE130CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
| MAP6KE100CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
| MAP6KE110CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
| MAP6KE120AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
| MAP6KE47CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.2V 64.8V T-1... |
| MAP6KE51CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 43.6V 70.1V T-1... |
| MAP6KE7.5CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
| MAP6KE100CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
| MAP6KE24CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V T-1... |
| MAP6KE200A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
| MAP6KE16AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
| MAP6KE6.8CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.8V 10.5V T-18 |
| MAP6KE18AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MAP6KE9.1A Datasheet/PDF