MAX2669EWT+

Series:	--
Part Status:	Obsolete
Frequency:	1575.42MHz
P1dB:	-10dBm
Gain:	17.7dB
Noise Figure:	0.65dB
RF Type:	GPS/GNSS
Voltage - Supply:	1.6 V ~ 3.3 V
Current - Supply:	7.7mA
Test Frequency:	1575.42MHz
Package / Case:	6-WFBGA, WLBGA
Supplier Device Package:	6-WLP (1.27x0.87)

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RF AmplifiersThe MAX2669EWT+ is a highly integrated, single-chip high-linearity RF amplifier with an integrated amplifier. It is a highly capable and cost-effective solution for ultra-low-noise amplifier (LNA) applications. It is designed for a wide range of applications, from ultra-low-noise receivers to high-power amplifiers. This section will discuss the application field and working principle of the MAX2669EWT+. The MAX2669EWT+ is an ideal choice for LNA applications in cellular and PCS radio systems. It supports a wide range of input frequencies from 48 to 860 MHz, including GSM, EDGE, and LT1. It is compliant with the stringent performance requirements of these standards and meets the needs of a wide range of LNA amplifiers. The typical noise figure is a low 1.25 dB, achieved under optimized environmental conditions. Its high linearity is achieved with a nominal third-order intercept point of over +30 dBm, providing excellent dynamic range performance. The MAX2669EWT+ is suitable for a wide range of other applications, including wireless LAN, broadband wireless, short- and long-haul radio, and cable TV and cable modem applications. It can also be used as a wide-band RF amplifier for VHF/UHF receivers, WCDMA/EDG/GSM transmitters, and UWB receivers, and it provides excellent linearity and noise performance for these applications.In addition to its wide range of applications, the MAX2669EWT+ also has a number of important operating parameters that make it a highly versatile and desirable amplifier for many different applications. It has a very low typical power consumption of 4.1 mA, and a high gain of 14.9 dB with a 210 dB small-signal control range, providing a wide dynamic range capability. The device also operates with two different supply voltages – 1.5 V for the front-end, and 2.8 V for the output buffer. It also includes a two-pole active low-pass filter with a corner frequency of 47 MHz, eliminating the need for an external LC filter in many applications. The working principle of the MAX2669EWT+ is relatively simple. It is composed of three separate stages – an input amplifier, a low-noise amplifier with adjustable gain, and an output buffer. The input amplifier and output buffer are implemented using a state-of-the-art CMOS process, with integrated on-chip automatic gain control (AGC). The low-noise amplifier is configured with a low-noise two-stage cascode circuit, which provides excellent noise performance and a wide dynamic range. The device also includes an integrated amplifier with a high linearity of over +30 dBm, providing excellent performance in a wide range of applications. The MAX2669EWT+ is a highly versatile and cost-effective RF amplifier. Its wide range of applications, wide frequency range, and low power consumption make it an ideal solution for many applications. It is compliant with stringent performance requirements and provides excellent linearity and noise performance. It also has an integrated amplifier with a high linearity of +30 dBm, providing excellent dynamic range performance. This makes it an ideal solution for many applications, from LTE to WLAN applications.

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