MAZS0750ML Discrete Semiconductor Products |
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Allicdata Part #: | MAZS0750MLTR-ND |
Manufacturer Part#: |
MAZS0750ML |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | DIODE ZENER 7.5V 150MW SSMINI2 |
More Detail: | Zener Diode 7.5V 150mW ±3% Surface Mount SSMini2-F... |
DataSheet: | MAZS0750ML Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 7.5V |
Tolerance: | ±3% |
Power - Max: | 150mW |
Impedance (Max) (Zzt): | 20 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 5V |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 10mA |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | SSMini2-F1 |
Base Part Number: | MAZS07V5 |
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The MAZS0750ML is a Zener diode, also known as a voltage-regulated diode, suitable for overvoltage protection and voltage reference applications. It is a single-terminal, small-signal device capable of dissipating up to 500 MW of power. This device is also suitable for use in applications where high-bandwidth and low-noise performance is desired. This diode offers excellent power, breakdown voltage, and thermal stability.
The MAZS0750ML is constructed from a light aluminum alloy and it has a glass seal for environmental protection. It has a temperature rating of -55°C to +125°C, so it can be used in a wide range of temperatures. The device is currently available in three different packages: SMD, SOT-323, and zero-Ohm machines.
The MAZS0750ML contains a very precise incident light absorption layer and its junction voltage is independent of the forward bias current. This diode has a breakdown voltage range of 7.4-75.0V and its reverse temperature coefficient is much lower than that of other power diodes. The forward voltage drop and reverse leakage current are also very low compared to other diodes, which makes it an ideal choice for overvoltage protection, voltage references, and low voltage drop applications.
The operation of the MAZS0750ML is based on the same underlying principles as other Zener diodes. It consists of a PN junction with a reverse breakdown voltage that is determined by the material composition. The PN junction is formed between two semiconductor materials, usually silicon and germanium. As a result, when the applied voltage reaches the Zener voltage, the PN junction will become conductive and the current will flow from the anode to the cathode. This will allow the reverse current to flow through the diode, allowing for the electrical protection of sensitive components.
Aside from protecting sensitive components from overvoltage, the MAZS0750ML can also be used for general purpose voltage reference applications. Zener diodes offer stability and accuracy of input and output voltages over temperature variations. The device is also capable of tight tolerances, fast switching speeds, and low power consumption.
The MAZS0750ML is a very reliable and fast reacting Zener diode which makes it perfect for a variety of applications. Its small size, low noise performance, and wide temperature rating make it suitable for use in a wide range of applications. It is suitable for a variety of overvoltage protection, voltage reference, voltage drop, and other applications.
The specific data is subject to PDF, and the above content is for reference
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