MAZS270GML Discrete Semiconductor Products

In order to understand the working principle of the MAZS270GML, it is first important to understand the basic principles of Zener diode operation. Zener diodes are named after their inventor, Milton Zener, who discovered that when reversed biased, a p-n junction diode can become a negative resistance element, allowing a current to flow in the opposite direction of the applied bias.

A Zener diode is a silicon p-n junction diode operating in reverse breakdown region. It is a diode device with a reverse breakdown voltage specified as Vz. A standard diode has an abrupt avalanche breakdown, while a Zener diode has a more gradual breakdown and can be used to regulate the voltage, allowing a constant voltage over a wide range of current. When the reverse voltage across the diode is below the Zener breakdown voltage, the current is only limited by the external resistance. Once the breakdown voltage is reached, a large increase in current occurs and the voltage across the diode is limited to the Zener breakdown voltage.

The MAZS270GML is a 350mW, 270V Silicon P-N junction diode. This device has a peak pulse power dissipation rating of 1000W, with a current rating of 400mA. This device is designed for automotive and industrial applications and is capable of withstanding high temperature and vibration conditions. The MAZS270GML is designed to have a low forward voltage drop of less than 2V, reducing power losses and providing an excellent thermal performance. The maximum forward surge current rating is 40mA and the reverse recovery time is less than 1ms.

In summary, the MAZS270GML is a single Zener diode which provides a wide range of applications, such as voltage regulation, voltage clamping, surge protection, ESD protection and low power losses. This device is able to withstand high temperature and vibration conditions, making it ideal for automotive and industrial applications. It is able to provide a constant voltage over a wide range of currents and is capable of withstanding forward surge currents of up to 40mA.

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