Allicdata Part #: | MBR10100C0G-ND |
Manufacturer Part#: |
MBR10100 C0G |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 100V 10A TO220AC |
More Detail: | Diode Schottky 100V 10A Through Hole TO-220AC |
DataSheet: | MBR10100 C0G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.17861 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 850mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
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MBR10100 C0G Applications field and Working Principle
MBR10100 C0G or Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) diodes are widely used in switching, electrostatic discharge (ESD) protection, and other high-voltage applications. This diode is suitable for applications where current and voltage are low. It can be used in a variety of circuits, such as analog signal level shifting, supply regulation and conversion, and power-rectifying applications.
The MOSFET diode consists of two layers of refractory metal oxide. The first layer is the control layer, which consists of one or more transistors. The second layer is the semiconductor layer, which typically consists of polycrystalline silicon dioxide. The MOSFET diode acts as a semiconductor switch, allowing the current to flow from one location to another.
The MOSFET diode is capable of switching rapidly between two states, known as "on" and "off." When in the "on" state, current will flow from the source terminal to the destination terminal. The destination terminal is typically connected to a load. As current flows across the diode, it is subject to the P-N junction of the semiconductor structure. The P-N junction allows for low-energy, low-switch speeds, and reduced power losses.
In the "off" state, the diode is non-conductive and no current flows. This occurs when the voltage applied across the diode is less than the threshold voltage of the diode. The threshold voltage is typically equal to the breakdown voltage of the diode.
The MOSFET diode can be used in many applications including rectification, voltage regulation, signal level shifting, and power conversion. Due to its fast switching speed, small size and low power consumption, and ease of manufacture, the MOSFET diode is becoming increasingly popular for use in consumer electronics, automotive, industrial and medical electronics.
The MOSFET diode is available in many different types, such as the single diode, dual diode, and four diode. Depending on the application, one or more diodes may be connected in parallel with the other. This can increase the current capacity of the diode and reduce the junction capacitance.
The working principle of the MOSFET diode is based on the P-N junction. When a sufficient voltage is applied across the diode, electrons begin to flow from the N-type material to the P-type material, creating an electric field. This electric field creates a "depletion region" that acts as an insulator, preventing further current from flowing through it. In the "on" state, the electric field weakens, allowing current to flow freely.
The MOSFET diode can be used in many different applications, such as switching, voltage and current regulation, signal level shifting, and power conversion. The MOSFET diode is a reliable and cost-effective solution for many applications. It is also a good choice for high-frequency applications and is often used as part of reduce-voltage circuits.
The specific data is subject to PDF, and the above content is for reference
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