MBR1045ULPS-TP Discrete Semiconductor Products |
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Allicdata Part #: | MBR1045ULPS-TPMSTR-ND |
Manufacturer Part#: |
MBR1045ULPS-TP |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE SCHOTTKY 45V 10A TO277B |
More Detail: | Diode Schottky 45V 10A Surface Mount TO-277B |
DataSheet: | MBR1045ULPS-TP Datasheet/PDF |
Quantity: | 5000 |
5000 +: | $ 0.17861 |
10000 +: | $ 0.17640 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 470mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 250µA @ 45V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277B |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | MBR1045 |
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The MBR1045ULPS-TP is a silicon rectifier diode, which is classified as an ultra-low-power Schottky (ULPS) version, in the single diode category. This diode offers a number of advantages over other types of single diodes. It has a high surge current capability, low forward voltage drop, and low reverse leakage current. It also has a low forward recovery time and very low power dissipation. This makes it suitable for applications where minimizing power consumption is essential.
The MBR1045ULPS-TP rectifier diode is a single package breakdown voltage (VBR) of 10 volts. Its maximum operating temperature is 150 degrees Celsius, and it has a maximum repetitive reverse voltage of 45 volts. Its breakdown voltage is also specified for single cycle operation. Its maximum average forward current is 5 amps, with its peak forward surge current being 30 amps under pulse conditions.
The working principle of the MBR1045ULPS-TP is based on the PN junction, wherein a barrier potential is created across a reverse-biased junction. This barrier potential, known as the junction potential, is such that it prevents significant current flow in either direction between the different regions of the diode. In forward bias, the junction potential is reduced, allowing current to flow in the forward direction.
The MBR1045ULPS-TP rectifier diode can be used in a wide variety of applications, including power transmission and generation, automotive, industrial, and solar energy systems. Its ultra-low-power consumption, low forward voltage drop, and very low reverse leakage current makes it an ideal choice for applications where minimizing power consumption is essential. Its high current capability, low forward voltage drop, and very low power dissipation make it suitable for power transmission and generation, automotive, and industrial applications. Its low forward recovery time and low reverse leakage current make it an excellent choice for solar energy systems.
In conclusion, the MBR1045ULPS-TP is a single package rectifier diode that offers a number of advantages over other types of single rectifier diodes. It has a high surge current capability, low forward voltage drop, and low reverse leakage current. It also has a low forward recovery time and very low power dissipation. This makes it suitable for applications where minimizing power consumption is essential. It can be used in a wide variety of applications, including power transmission and generation, automotive, industrial, and solar energy systems.
The specific data is subject to PDF, and the above content is for reference
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