MBR10200CDTR-G1

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The MBR10200CDTR-G1 is a diode array that is able to block current in one direction and conduct current in the other. Specifically, the MBR10200CDTR-G1 is a schottky diode array, which are widely used in power applications due to their lower forward voltage, fast switching speed and low power dissipation capabilities. The MBR10200CDTR-G1 is particularly suited for use as a so-called Velsom diode, which is used as a reverse biased blocking diode in applications where the output devices must be protected from transient or continuous currents. This device incorporates two parallel-connected diodes with a single pluggable terminal.

The MBR10200CDTR-G1 has a number of key electrical characteristics. The forward voltage drop is 3V, which is relatively low compared to other schottky diodes. Additionally, the reverse leakage current at 25 degrees C is a maximum of 0.5uA. Regarding power dissipation, the MBR10200CDTR-G1 can comfortably handle 1W of power without any external heat sinking. Its dielectric strength is rated to 250V.

The MBR10200CDTR-G1 is suitable for a variety of applications, including high frequency switching power supplies, switch mode DC to AC inverters, freewheeling protection, bidirectional power supply regulation, high temperature diodes, and polarity protection. In each of these applications, the MBR10200CDTR-G1 serves as a reverse biased blocking diode, preventing alternations to the polarity of the output devices. In high temperature applications, the MBR10200CDTR-G1’s low forward voltage and fast switching speed are essential for maximum efficiency, while in other applications such as DC to AC inverters and power supplies its low leakage current is beneficial.

The working principle of the MBR10200CDTR-G1 diode array relies on the fact that it is naturally asymmetrical. When in reverse bias, the electrons inside the diode will be influenced by its structure to accumulate at the p-region junction. This interaction of electrons with the structure of the diode creates a potential barrier, which is known as the built-in zener voltage. As long as the magnitude of the reverse bias voltage is lower than the built-in voltage, the diode will remain open and will effectively block the reverse current.

When connected in the forward bias configuration, the structure of the diode is such that the electrons are no longer influenced by the structure of the diode and are instead accelerated towards the n-region junction thanks to the positive bias energy. This action creates the phenomenon of the electrons flowing from the p-region junction to the n-region junction, thus allowing electrical current to flow in one direction. Thanks to the fast switching characteristics of the schottky diode, the current is capable of flowing between the two junctions even for brief periods of time.

In conclusion, the MBR10200CDTR-G1 diode array is a versatile, reliable and energy-efficient device used in a variety of applications. Its low forward voltage and fast switching speed make it ideal for high temperature and high frequency applications, while its low leakage current makes it perfectly suited for power supply regulation and polarity protection.

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