MBR5H100MFST1G

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Diodes - Rectifiers - Single are a type of electronic components that allow current to flow in one direction only. The MBR5H100MFST1G diode is a single-phase ultrafast diode with an average recovery time of only 7.4 ns, particularly suitable for applications with high frequency or high speed switching. It is an advanced fast-recovery model of power Schottky rectifier.

Application Field

The MBR5H100MFST1G diode can be used in high-frequency switching power supplies, automotive power systems, industrial power supplies, UPS power systems, LED lighting, and general power control. Its high surge capability and fast recovery time can achieve higher efficiency in systems such as UPS and solar.

In addition, this diode is a Schottky rectifier type, which has superior performance compared to general silicon-dioxide-based rectifiers in power applications. As compared with other Schottky diodes, this model has an even faster response in reverse recovery with an average recovery time of 7.4 ns, ensuring a high switching speed and low power loss. This diode\'s high current and voltage rate can also help improve system durability in driving power induction loads.

Working Principle

The MBR5H100MFST1G diode works like a traditional diode where the free electrons in the n-region are attracted to the positively charged p-region when connected forward-biased. As compared to a pn-junction diode, Schottky diodes have faster response time and higher forward current capabilities due to the missing depletion region because no holes exist to recombine with electrons. The MBR5H100MFST1G\'s Schottky diode characteristics provide a low forward voltage rating and low reverse leakage current. When the diode is switched off, it blocks the current from flowing from the anode to the cathode.

When the MBR5H100MFST1G diode is reverse-biased, the current flow is minute due to the low forward voltage it produces. This low forward voltage makes them attractive to high frequency applications, as switching losses are reduced. The ultrafast Schottky diode also ensures a fast recovery of reverse current as the reverse-biased device turns on. This low recovery time and low switching losses make the MBR5H100MFST1G ideal for high-frequency power supplies and other applications requiring a fast response time.

Conclusion

The MBR5H100MFST1G diode is a single-phase ultrafast diode ideal for applications with high frequency or high speed switching. Its high surge capability and fast recovery time can help achieve higher efficiency in systems such as UPS and solar. Its Schottky diode characteristics provide a low forward voltage rating and low reverse leakage current. In addition, its ultrafast response time and low switching losses make the MBR5H100MFST1G an ideal choice for high-frequency power supply designs and other applications requiring a fast response device.

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