MBR5H150VPTR-E1

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	150V
Current - Average Rectified (Io):	5A
Voltage - Forward (Vf) (Max) @ If:	920mV @ 5A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	8µA @ 150V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	DO-201AA, DO-27, Axial
Supplier Device Package:	DO-27
Operating Temperature - Junction:	175°C (Max)

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IntroductionMBR5H150VPTR-E1 is a high voltage rectifier diode that can be used for a variety of applications. It has a maximum peak repetitive reverse voltage (VRRM) of 5kV, a maximum continuous reverse current (IF) of 150mA, a maximum average forward current (IF(AV)) of 50mA, and a maximum non-repetitive peak forward surge current (IFSM) of 1.5A. The diode is capable of operating at temperatures ranging from -55 to 150 degrees Celsius, and has a thermal resistance of 0.075K/W.ApplicationsMBR5H150VPTR-E1 can be used in a variety of applications such as power supplies, motor drives, energy storage systems, and more. Due to its high-voltage rating, it can be used in high-voltage power supplies, for example for single-phase or three-phase rectification. The diode\'s ability to operate at temperature ranging from -55 to 150 degrees Celsius makes it ideal for applications where temperatures fluctuate or where heat dissipation can be difficult. It can also be used in an array of non-automotive power semiconductor applications including lighting, battery charging and solar energy systems.Working PrincipleThe MBR5H150VPTR-E1 rectifier diode is a two-terminal device, with one terminal connected to the anode and the other to the cathode. When the anode is more positive than the cathode, current flows in the form of minority carriers and the diode is said to be \'forward-biased\'. Minority carriers are generated by the thermal energy that results from the junction of the two semiconductor materials within the diode. When the anode is more negative than the cathode, current is "blocked" by the minority carriers and the diode is said to be \'reverse-biased\'.The forward voltage of the diode (VF) depends on a number of factors such as the type of semiconductor material used and the ambient temperature. The typical forward voltage of the MBR5H150VPTR-E1 is 6V at 125 degrees Celsius and 9V at 25 degrees Celsius.ConclusionThe MBR5H150VPTR-E1 is a high voltage rectifier diode used for a variety of power semiconductor applications in industries such as automotive, lighting, battery charging, and solar energy systems. Its wide operating temperature range and thermal resistance make it suitable for applications where temperatures fluctuate and heat dissipation can be difficult. The diode can be forward-biased to allow current to flow, or reverse-biased to prevent current flow, and its forward voltage is dependent on temperature, type of semiconductor material used and other factors.

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