MBR5200VPTR-E1 Allicdata Electronics

MBR5200VPTR-E1 Discrete Semiconductor Products

Allicdata Part #:

MBR5200VPTR-E1DITB-ND

Manufacturer Part#:

MBR5200VPTR-E1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE SCHOTTKY 200V 5A DO27
More Detail: Diode Schottky 200V 5A Through Hole DO-27
DataSheet: MBR5200VPTR-E1 datasheetMBR5200VPTR-E1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 200V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Description

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Today, various electronic components are being used in consumer electronic devices, and one of the most popular ones among them is the MBR5200VPTR-E1 diode. Widely used in consumer electronic devices, the MBR5200VPTR-E1 diode is a single type rectifier diode, designed for very high current applications and with a very high reverse voltage, making it an ideal choice for withstanding extreme environmental conditions.

The MBR5200VPTR-E1 is a single type rectifier diode specifically designed to handle very high forward currents and large reverse voltage. The device’s features include a maximum forward current capacity of 5.2 A and a maximum reverse voltage of 200 V, making it very capable in withstanding extreme environmental conditions such as temperature, humidity, and power surges. As a result, it is frequently used in consumer electronic applications.

The application field and working principle of the MBR5200VPTR-E1 can be described as follows. The device is primarily used in consumer electronic equipment, where it helps to control power flow and to protect circuits from being overloaded by external input voltage. The device works by allowing current to flow in only one direction, while preventing current from flowing in the opposite direction. This action is accomplished by utilizing a P-N junction and an avalanche breakdown phenomenon.

When forward bias is applied, the P-N junction of the diode acts as a switch and allows current to pass through. When reverse bias voltage is applied to the junction, electrons from the n-type region are attracted to the junction and hole tunnels through the junction. This phenomenon is called the avalanche breakdown and it helps to protect the circuit from reverse current.

As mentioned, the MBR5200VPTR-E1 diode is often used in consumer electronic devices to control power flow and protect circuits from being overloaded by external input voltage. In these applications, the device works to effectively reduce the risk of component damage due to short circuits and other issues. The device is also used in communications and telecommunication equipment, where it helps to reduce interference while maintaining signal integrity.

In addition, the device is also used in military and industrial applications, where its rugged design and high current capacity make it an ideal solution for extreme environment conditions. The device is also capable of handling high currents on pulsed applications, another important advantage in military and industrial applications.

The MBR5200VPTR-E1 is a single type rectifier diode that is primarily used in consumer electronic applications to protect circuits from being overloaded by external input voltage. This is accomplished by utilizing a P-N junction and an avalanche breakdown phenomenon. Furthermore, the device is also capable of handling high currents on pulsed applications, making it ideal for industrial and military applications that require high levels of reliability.

The specific data is subject to PDF, and the above content is for reference

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