MBR745HC0G Allicdata Electronics
Allicdata Part #:

MBR745HC0G-ND

Manufacturer Part#:

MBR745HC0G

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE SCHOTTKY 50V 7.5A TO220AC
More Detail: Diode Schottky 50V 7.5A Through Hole TO-220AC
DataSheet: MBR745HC0G datasheetMBR745HC0G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.23735
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Series: Automotive, AEC-Q101
Packaging: Tube 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 50V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The MBR745HC0G is an ultra-fast mbf0145 rectifier diode designed for use in reverse polarity protection, power factor correction, automatic load controllers, and dynamic braking for electric traction systems and other applications that require high speed operation. The diode is capable of delivering a current of 45A, with a reverse recovery time of under 300ns. It is also designed for use in high temperature environments, and has an operating temperature range of -60 to +180 degrees Celsius.

The MBR745HC0G is a single phase silicon rectifier diode. Rectifier diodes can be used to convert alternating current (AC) to direct current (DC). A single phase rectifier produces DC current in a single direction, with current being passed unidirectionally. This makes them ideal for applications such as bridge rectifiers, dc-dc converters, power supplies, etc.

The working principle of single phase rectifiers is based on the PN junction diode characteristics. When a forward voltage is applied to the diode, electron-hole recombination takes place, allowing both electrons and holes to pass through the diode. As the current passes through the diode, it\'s forward voltage drop acts as a voltage regulator, helping to protect the circuit. When the current is reversed, the diode is no longer able to conduct, thus providing a path for current and providing the required functionality.

The MBR745HC0G is suitable for use in a wide range of applications such as motor control, switched mode power supplies, DC-DC converters, audio circuits, power factor correction, power protection, surge protection, and many other applications where a fast reverse recovery time is required. The diode is also suitable for use in automotive applications that require high speed reverse recovery operation and are subject to extreme temperatures.

The MBR745HC0G is a single-piece package design that is available in through-hole and SMT (surface mount technology) configurations. The diode is a high-performance device that is suited for low forward voltage operations and high breakdown voltage applications. It is ideal for applications where high power efficiency is required and has become a popular choice among electronic engineers.

The MBR745HC0G is a reliable and cost-effective solution for reverse polarity protection and fast recovery from high voltage transients. The diode’s ultra-fast reverse recovery time ensures that current is only conducted in the forward direction and is prevented from flowing in the reverse direction. This is an invaluable feature for applications where fast recovery time is critical.

In summary, the MBR745HC0G is an ultra-fast rectifier diode that is ideal for use in power conversion and high speed applications. It is designed for use in harsh environments, and is capable of delivering high current with fast reverse recovery time. The single phase rectifier is suitable for use in wide range of applications including motor control, power supplies, audio circuits, surge protection, and many others. The diode itself is available in two different packages and presents an effective and cost-efficient solution for reverse polarity protection and immunity to high transients.

The specific data is subject to PDF, and the above content is for reference

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