MBR745-E3/45

Series:	--
Packaging:	Tube
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	45V
Current - Average Rectified (Io):	7.5A
Voltage - Forward (Vf) (Max) @ If:	840mV @ 15A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	100µA @ 45V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	TO-220-2
Supplier Device Package:	TO-220AC
Operating Temperature - Junction:	-65°C ~ 175°C
Base Part Number:	MBR745

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MBR745-E3/45 application field and working principle

Introduction

Diodes are widely used components in many circuits, especially in applications like rectifying, voltage regulation, power conditioning, protection and other important functions in the management of power supply and signal flow. The MBR745-E3/45 is an ultra-low VF Schottky diode, rated at 45V, with a maximum­ reverse current (Ir) of 7 A. It is widely used in electronic devices due to its wide range of application fields and its ability to handle large currents and voltages. In this article, we will discuss the application field and the working principle of the MBR745-E3/45.

Application Fields

The MBR745-E3/45 is an SBD (schottky barrier diode) and is therefore suitable for use in multiple applications. It can handle high di/dt and has a high switching speed, making it suitable for high-power applications such as power switch products, power controllers and active clamps. Additionally, it is also used in applications such as half-bridge topologies, IGBT snubbers, high-side switches, full-bridge circuit designs, PFC circuits and TVS unidirectional clamps. Moreover, the MBR745-E3/45 is also well suited for rectifiers and high-current switching applications. It can be used in rectifier bridge configurations, resulting in improved performance and high efficiency due to its low forward voltage drop. Additionally, it can be used in synchronous micro-switches, DC-DC converters, and motor speed-control applications as a high-frequency switching device due to its low reverse recovery time (trr).

Working Principle

TheMBR745-E3/45 works on the principle of Schottky barrier. In a Schottky barrier diode, the p-n junction is formed by a silicide layer instead of the conventional depletion layer. This layer has wider bandgap and a narrower depletion region when compared to a p-n junction diode. As a result, it has a higher Junction barrier voltage, resulting in a more efficient rectification process.The rectification process of a MBR745-E3/45 operates in two general stages. In the first stage, current flows from the anode to the cathode, when the forward voltage is higher than thethreshold voltage. In the second stage, current will flow from the cathode to the anode, when the reverse voltage is higher than the threshold voltage. It is important to note that the MBR745-E3/45 has a lower forward voltage drop when compared to conventionally p-n junction diodes. This is due to the lower impedance of the silicide layer and the wider depletion layer. As a result, the MBR745-E3/45 has improved efficiency, making it suitable for applications where power consumption is a concern. Additionally, it also produces less heat, resulting in lower power losses.

Conclusion

In conclusion, the MBR745-E3/45 is an ultra-low VF Schottky diode, rated at 45V, with a maximum­ reverse current (Ir) of 7 A. It is widely used in electronic devices due to its wide range of application fields and its ability to handle large currents and voltages. It can be used in applications such as half-bridge topologies, IGBT snubbers, high-side switches, full-bridge circuit designs, PFC circuits, TVS unidirectional clamps, rectifier bridges, synchronous micro-switches, DC-DC converters, and motor speed-control applications. It operates on the principle of Schottky barriers, and has a lower forward voltage drop, improved efficiency and low power losses, making it suitable for high-power applications.

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