| Allicdata Part #: | MBRD650CTT4GOSTR-ND |
| Manufacturer Part#: |
MBRD650CTT4G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE ARRAY SCHOTTKY 50V 3A DPAK |
| More Detail: | Diode Array 1 Pair Common Cathode Schottky 50V 3A ... |
| DataSheet: | MBRD650CTT4G Datasheet/PDF |
| Quantity: | 2500 |
| Series: | SWITCHMODE™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Cathode |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Current - Average Rectified (Io) (per Diode): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 700mV @ 3A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 100µA @ 50V |
| Operating Temperature - Junction: | -65°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Base Part Number: | MBRD650CT |
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Diodes - Rectifiers - Arrays
The 650CTT4G is a popular integrated package combining a diode array and a P-channel MOSFET. It is used widely in high-side power switching and protection applications. The diode array is designed to provide reverse polarity protection, while the P-channel MOSFET provides controlled high-side switching.
Application Field
The 650CTT4G is primarily used in high-side load switching power supplies where a low voltage load is connected to a higher voltage power source. By using the integrated MOSFET and diode array, the 650CTT4G effectively prevents current from flowing in the reverse direction and provides protection against overload currents. It is often used in the following applications:
- AC/DC and DC/DC power supplies
- Chargers and adapters
- Automotive and industrial electronics
- Consumer electronics
Working Principle
The 650CTT4G is comprised of a diode array and an N-channel MOSFET. The diode array can be thought of as a series of diodes connected in parallel with each other. When forward current flows through the diode array, it conducts for both polarities, thus allowing current to flow in both directions. The diode has a narrow forward voltage drop, which allows for more efficient power conversion. The P-channel MOSFET is connected to the diode array and is used to regulate the operation of the circuit. When the gate of the MOSFET is high, it allows current to pass through the circuit. When the gate is low, the circuit is blocked and no current can pass. This allows the 650CTT4G to provide controlled high-side switching, as well as providing reverse polarity protection.
Conclusion
The 650CTT4G is a popular integrated package that combines a diode array and a P-channel MOSFET. It is used widely in high-side power switching and protection applications due to its low forward voltage drop and controlled high-side switching. It is found in a variety of applications such as AC/DC and DC/DC power supplies, chargers and adapters, automotive and industrial electronics and consumer electronics. With its two main components, the diode array and the MOSFET, it is able to provide reverse polarity protection and high-side switching.
The specific data is subject to PDF, and the above content is for reference
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MBRD650CTT4G Datasheet/PDF