Allicdata Part #: | MBRF2050CTHE3/45-ND |
Manufacturer Part#: |
MBRF2050CTHE3/45 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY SCHOTTKY 50V ITO220 |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 50V 10A... |
DataSheet: | MBRF2050CTHE3/45 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io) (per Diode): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 800mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 150µA @ 50V |
Operating Temperature - Junction: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AB |
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MBRF2050CTHE3/45 application field and working principle
MBRF2050CTHE3/45 is a transistor array device belonging to the Diodes - Rectifiers - Arrays family. Developed by ON Semiconductor, MBRF2050CTHE3/45 is a surface mount Schottky rectifier. It is a series of packaged products containing interconnected complementary pairs of P-channel and N-channel silicon MOSFETs.
Features
MBRF2050CTHE3/45 has excellent thermal management with a power dissipation of 250mW (package dependent) and a temperature range from -55℃ to 175℃. It also has an avalanche energy rating of 20mA at a breakdown voltage of 55V, for high switching speeds and ESD protection.
MBRF2050CTHE3/45 has a voltage rating of 45V and a current rating of 2.0A, making it suitable for low forward voltage applications and low to moderate power switching applications.
Applications
MBRF2050CTHE3/45 is ideally suited for use in industrial DC-DC converters, battery chargers, switch mode power supplies, and general purpose load switching applications. It is designed to operate in any environment exposed to the harshest temperature, moisture, humidity and shock requirements of industrial settings.
Working principle
The MBRF2050CTHE3/45 device consists of interconnected P-channel and N-channel enhancement mode silicon MOSFETs with a Schottky rectifier which allows for use as a low voltage, low forward voltage device. The device is especially suitable for applications with low voltage and high speed requirements in a high frequency, moderate power environment.
The integrated P-channel MOSFET acts as a switch. This switch is triggered by the gate when the output voltage is lower than the reference voltage. The integrated Schottky diode prevents current from being reversely directed to the gate, thus ensuring that the transistor switch is not damaged by excessive gate current.
The N-channel MOSFET acts as an output buffer, providing short circuit protection and ESD protection. The P-channel and N-channel MOSFETs are interconnected in the device with a depletion mode gate resistor which allows for safe operation at low voltages. The MBRF2050CTHE3/45 also has diodes for reverse conduction in the drain and source connections.
Conclusion
MBRF2050CTHE3/45 is a transistor array device developed by ON Semiconductor. It is intended for use in switch mode power supplies, industrial DC-DC converters and load switching applications. It is a low forward voltage device, with excellent thermal management and avalanche energy ratings. In addition, it provides short circuit protection, ESD protection and reverse conduction protection to ensure safe operation in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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MBRF20100CTP | Littelfuse I... | -- | 1000 | DIODE SCHOTTKY 100V 10A I... |
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MBRF10100CTR | Littelfuse I... | 1.15 $ | 1000 | DIODE SCHOTTKY 100V 5A IT... |
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MBRF2060CT C0G | Taiwan Semic... | 0.79 $ | 1000 | DIODE SCHOTTKY 60V 20A IT... |
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