Allicdata Part #: | MBRM110ET1OSTR-ND |
Manufacturer Part#: |
MBRM110ET1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 10V 1A POWERMITE |
More Detail: | Diode Schottky 10V 1A Surface Mount Powermite |
DataSheet: | MBRM110ET1 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 10V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 530mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1µA @ 10V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | Powermite |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | MBRM110 |
Description
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The MBRM110ET1 is an epitaxial Passivated Smart Power Rectifier, which belongs to the Diodes - Rectifiers - Single product category. It is used in various fields due to its high performance parameters, such as low leakage current and high blocking voltage. The advantages of the product include optimized switching losses, maximum power throughput, improved thermal behavior and increased power durability.The device is a single phase device, which features an advanced internal technology and construction, resulting in improved performance and reliability characteristics. It is composed of a doped epitaxial wafer production process that serves as the basis of the rectifier device. The structure is designed with a gate dielectric layer to control the gate current and reduce gate charge. This allows the rectifier to switch on and off quickly, and with reduced power losses.The main application field of the MBRM110ET1 is high frequency switching, such as in motor inverters, AC/DC converters and servers. It is also used in automotive and aerospace applications. Its working principle is rather simple - it is a PN junction device, which uses an external current to forward bias the PN junction. When the forward bias voltage exceeds the junction\'s reverse breakdown voltage, a large current flows through the device and it turns on. The reverse breakdown voltage is controlled by a gate electrode, which can be set to a predetermined value.The device consists of two layers of doped semiconductor material - an N-type layer and a P-type layer. When the device is off, the P-N junction is reverse biased and no current flows. However, when a forward bias voltage is applied, electrons from the N-type layer flow to the P-type layer and majority carriers from the P-type layer flow to the N-type layer. This creates a low resistance path, allowing current to flow.The design of the MBRM110ET1 provides excellent performance parameters, such as low forward conductance, low switching losses, and low reverse leakage. Additionally, its robust design allows the device to operate at high temperatures while providing high reliability. This makes it ideal for applications where high reliability and efficient operation are required, such as automotive and aerospace applications.Overall, the MBRM110ET1 is an excellent single phase trench gate rectifier, designed for efficient, high-power applications. Its high performance parameters and robust design make it an ideal component for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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