MBRM130LT1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	30V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	380mV @ 1A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	410µA @ 30V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	DO-216AA
Supplier Device Package:	Powermite
Operating Temperature - Junction:	-55°C ~ 125°C
Base Part Number:	MBRM130

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The MBRM130LT1G diode is a rectifier diode belonging to the the Single diode category. It has through-hole mounting type, forward current of 130 A and allows Silicon (Si) Controlled Rectifier. It offers blocking voltage upto 600 V, IFsm of 12 A, reverse current of 2 uA at Vr of 600 V, reverse recovery time of 75 ns, junction temperature of 150 °C and Package of TO-220FG. It is also RoHS compliant. The general specifications for MBRM130LT1G diode are listed as follows:

• Average Rectified Current(Ir): 130 A
• Non-Repetitive Peak Surge Current Irrm: 1080 A
• DC Blocking Voltage: 600 V
• Max. Reverse Recovery Time (trr): 75 ns
• Max. Forward Voltage Drop (Vf): 0.9 V @ IF=50 A
• Max. Average Forward Current (Ifav): 0 <> 50 A
• Max. Reverse Leakage Current: 2 uA @ Vr=600 V
• Max. Junction Temperature: 150 °C
• Package: TO-220FG

MBRM130LT1G diodes are primarily used in applications such as high frequency switching, snubber circuits, high speed switching, high frequency rectification, anti-parallel diode, and general purpose rectification. Because of its high forward voltage drop efficiency, it finds applications in high current DC motor control circuits. A typical application of MBRM130LT1G diode is illustrated in the circuit below. As depicted in the circuit, the Gate voltage (Vine) is applied to the Gate pin which then turns the diode  ON and allow the current to flow from the Anode pin to the Cathode pin, resulting in the power dissipation in the load. The Gate voltage can be varied to adjust the duty cycle of the circuit and, thus, control the speed of the motor. The working principle of a MBRM130LT1G diode is based on the energy gap between the p- and n-type semiconductors. When the voltage applied across the diode’s anode and cathode is in the forward bias, the energy gap between the electrons in the p-type semiconductor and the holes in the n-type semiconductor decreases. This decrease in the energy gap allows electrons in the p-type semiconductor to fill the holes in the n-type semiconductor, creating a channel through which the current can flow. At the same time, when the voltage is in reverse bias, the diode’s energy gap increases, blocking the current from flowing. The capacity of MBRM130LT1G diode to handle high currents and switching speed makes it suitable for numerous power control applications, including in DC motor control circuits. It also is RoHS compliant and therefore can be safely used in environments with limited space.

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