MBRM120ET3G Allicdata Electronics
Allicdata Part #:

MBRM120ET3GOSTR-ND

Manufacturer Part#:

MBRM120ET3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE SCHOTTKY 20V 1A POWERMITE
More Detail: Diode Schottky 20V 1A Surface Mount Powermite
DataSheet: MBRM120ET3G datasheetMBRM120ET3G Datasheet/PDF
Quantity: 12000
Stock 12000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 20V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: MBRM120
Description

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Diodes - Rectifiers - Single

The MBRM120ET3G is a Single Rectifier diode from NXP Semiconductors. This diode is specially designed for applications demanding high temperature and high current performance. It is a medium-power type diode with a reverse voltage of 120V and a forward current rating up to 5.2A.

Application Field

This device is suitable for use in AC-DC power supplies, high current rectification, battery charger circuits, switch-mode power supply and general purpose rectification circuit.

Working Principle

The diode is a two-terminal device with an anode electrode and a cathode electrode. In general, when the polarity of the applied voltage is positive with the anode as the positive terminal, electrons flow through the junction from the n-type material towards the p-type material. This establishes a current and the diode is said to be forward biased. However, when the polarity of the applied voltage is reversed, the current through the diode reverses as the junction becomes reversed biased.

This diode is also known as a silicon or rectifying diode due to its ability to be reverse or forward biased. In the forward bias condition, the diode acts as a closed switch allowing current flow but in the reverse bias condition, the diode acts as an open switch prohibiting current flow..

The MBRM120ET3G diode is implemented with an optimized design to reduce the switching losses and achieve high thermal stability, thermal performance and a low forward voltage drop resulting in higher current throughput during operation. The diode features fast switching time and temperature independent forward voltage, which are critical to ensure reliable operation without causing any over-voltage stress on the circuit components.

Advantages

The main advantages of this diode are its fast switching time and temperature independent forward voltage. In addition, the device offers a guard ring for transient protection, an improved surge capability and an ultra-low reverse leakage current. It also offers an extended operational temperature range from -65 to + 200C. This makes it ideal for use in a variety of commercial and industrial applications.

Conclusion

The MBRM120ET3G is a single rectifier diode designed for high temperature and high current applications. It offers fast switching time, temperature independent forward voltage, guard ring for transient protection, improved surge capability and extended operational temperature range. This makes it suitable for a variety of commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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