Allicdata Part #: | MBRM120ET3GOSTR-ND |
Manufacturer Part#: |
MBRM120ET3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 20V 1A POWERMITE |
More Detail: | Diode Schottky 20V 1A Surface Mount Powermite |
DataSheet: | MBRM120ET3G Datasheet/PDF |
Quantity: | 12000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 530mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 20V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | Powermite |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | MBRM120 |
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Diodes - Rectifiers - Single
The MBRM120ET3G is a Single Rectifier diode from NXP Semiconductors. This diode is specially designed for applications demanding high temperature and high current performance. It is a medium-power type diode with a reverse voltage of 120V and a forward current rating up to 5.2A.
Application Field
This device is suitable for use in AC-DC power supplies, high current rectification, battery charger circuits, switch-mode power supply and general purpose rectification circuit.
Working Principle
The diode is a two-terminal device with an anode electrode and a cathode electrode. In general, when the polarity of the applied voltage is positive with the anode as the positive terminal, electrons flow through the junction from the n-type material towards the p-type material. This establishes a current and the diode is said to be forward biased. However, when the polarity of the applied voltage is reversed, the current through the diode reverses as the junction becomes reversed biased.
This diode is also known as a silicon or rectifying diode due to its ability to be reverse or forward biased. In the forward bias condition, the diode acts as a closed switch allowing current flow but in the reverse bias condition, the diode acts as an open switch prohibiting current flow..
The MBRM120ET3G diode is implemented with an optimized design to reduce the switching losses and achieve high thermal stability, thermal performance and a low forward voltage drop resulting in higher current throughput during operation. The diode features fast switching time and temperature independent forward voltage, which are critical to ensure reliable operation without causing any over-voltage stress on the circuit components.
Advantages
The main advantages of this diode are its fast switching time and temperature independent forward voltage. In addition, the device offers a guard ring for transient protection, an improved surge capability and an ultra-low reverse leakage current. It also offers an extended operational temperature range from -65 to + 200C. This makes it ideal for use in a variety of commercial and industrial applications.
Conclusion
The MBRM120ET3G is a single rectifier diode designed for high temperature and high current applications. It offers fast switching time, temperature independent forward voltage, guard ring for transient protection, improved surge capability and extended operational temperature range. This makes it suitable for a variety of commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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