MBRS120T3G

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1. Describe

The device uses the Schottky barrier principle for a large area Metal silicon power diode. State-of-the-art geometric features Epitaxial structure with oxide passivation and metal coating touch. Very suitable for low-voltage, high-frequency rectification, or As a freewheeling and polarity protection diode in surface mount Applications where compact size and weight are critical to the system.

2. Features

    1. Small Compact Surface Mountable Package with J−Bend Leads

    2. Rectangular Package for Automated Handling

    3. Highly Stable Oxide Passivated Junction

    4. Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25°C)

    5. Excellent Ability to Withstand Reverse Avalanche Energy Transients

    6. Guard−Ring for Stress Protection

    7. ESD Ratings:

        - Human Body Model = 3B (> 16000 V)

        - Machine Model = C (> 400 V)

    8. SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*

    9. These are Pb−Free Devices

3. Mechanical Characteristics

    1. Case: Epoxy, Molded

    2. Weight: 95 mg (Approximately)

    3. Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

    4. Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

    5. Cathode Polarity Band

4. ELECTRICAL CHARACTERISTICS

5. Package overview