MC34151DR2G Allicdata Electronics

MC34151DR2G Integrated Circuits (ICs)

Allicdata Part #:

MC34151DR2GOSTR-ND

Manufacturer Part#:

MC34151DR2G

Price: $ 0.41
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC MOSFET DRIVER DUAL HS 8-SOIC
More Detail: Low-Side Gate Driver IC Inverting 8-SOIC
DataSheet: MC34151DR2G datasheetMC34151DR2G Datasheet/PDF
Quantity: 1000
2500 +: $ 0.37961
5000 +: $ 0.36063
12500 +: $ 0.34707
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Logic Voltage - VIL, VIH: 0.8V, 2.6V
Base Part Number: MC34151
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 31ns, 32ns
Input Type: Inverting
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Series: --
Voltage - Supply: 6.5 V ~ 18 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Low-Side
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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<MC34151DR2G Application Field and Working Principle >

The MC34151DR2G is a power management integrated circuit (PMIC) otherwise known as a gate driver, used to switch high voltage power MOSFETs and IGBTs. It is used in various applications such as motor drives, HVAC, lighting, heating, and refrigeration. The device is specifically designed to drive two power MOSFETs with high transient immunity and low RDS(ON) backside short circuits. It features a maximum operating voltage of 1200V, with a wide range of current ratings from 12A to 40A.

The MC34151DR2G is composed of several components, including a high voltage power MOSFET gate driver, drivers for MOSFETs, logic level MOSFETs, an overvoltage/overcurrent protection circuit. The device also contains a driver amplifier, a p-channel MOSFET, a n-channel MOSFET, and a power MOSFET. The driver amplifier is responsible for producing the necessary supply voltage for the gate of the MOSFET. The overvoltage protection circuit helps protect the MOSFETs from overvoltage conditions. The logic level MOSFETs are used to control the current flow, while the power MOSFETs are used to switch the current on and off.

The working principle of the MC34151DR2G is relatively straightforward. When a voltage is applied to the gate, a voltage is generated across the MOSFET, which switches on and off the gate voltage to control the current flow through the device. This gate switching can be done either manually or by a logic control circuit. Once the gate voltage is switched by either method, the current through the MOSFET is regulated and can be set by adjusting the gate voltage.

The MC34151DR2G provides several benefits to users, including the ability to switch between low side and high side control of two power MOSFETs. It has high switching speed and requires minimal external components. Its low RDS(ON) level ensures a high-efficiency power conversion. The device is also very small and lightweight, making it ideal for use in space-constrained applications. The MC34151DR2G is suitable for use in high-power applications, such as motor drives, HVAC, lighting, heating, and refrigeration.

The specific data is subject to PDF, and the above content is for reference

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