Allicdata Part #: | MCH3377-TL-WOSTR-ND |
Manufacturer Part#: |
MCH3377-TL-W |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 3A MCPH3 |
More Detail: | P-Channel 20V 3A (Ta) 1W (Ta) Surface Mount 3-MCPH |
DataSheet: | MCH3377-TL-W Datasheet/PDF |
Quantity: | 3000 |
Specifications
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | 3-MCPH |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 375pF @ 10V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 4.6nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 83 mOhm @ 1.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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MCH3377-TL-W is a bipolar junction transistor (BJT) with an NPN (Negative-Positive-Negative) structure, designed to operate as a medium power N-channel MOS field effect transistor (MOSFET). It is a high-voltage device with an ON resistance of 2.5Ω, which makes it well suited for high-power applications. The device has three terminals; the gate, the source, and the drain which makes it a three-terminal device. It is made using a silicon-based semiconductor material and is housed in a plastic case which is insulated from the other components of the circuit. MCH3377-TL-W is mainly used in telecommunication and power management applications. It is also commonly used in electronic appliances such as toasters, microwave ovens and air purifiers. This device is used in a wide range of applications due to its excellent performance characteristics such as high voltage range, low noise and high efficiency. It also has a high switching speed and can operate at high frequencies, making it ideal for high-speed applications. The working principle of MCH3377-TL-W is based on the effect of electric field control of current on a channel. When the gate voltage is increased, electrons flow from the source to the drain, which in turn causes current that passes through the channel. This current is called the drain current. The amount of current through the channel is related to the gate-source voltage (Vgs). As Vgs increases, the gate-drain current (Id) also increases, resulting in a higher drain current which is then passed through the circuit. The device is also capable of providing self-protection feature in high-voltage applications. This is due to its high breakdown voltage, which is above 200V. This ensures that the device does not get damaged due to high voltages. In addition, this device can also reduce the power dissipation, as it features low gate-source voltage (Vgs) protection. This ensures that the device does not experience any unwanted power dissipation.In summary, MCH3377-TL-W is a versatile, high-performance and high-voltage BJT with an NPN structure. It is well-suited for high-power applications and its excellent performance characteristics make it an ideal choice for applications requiring a high voltage range, low noise and high efficiency. This device also has a high switching speed and can operate at high frequencies, making it a perfect choice for high-speed applications.
The specific data is subject to PDF, and the above content is for reference
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