MCH3383-TL-H Discrete Semiconductor Products

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MCH3383-TL-H is a single mixed signal power field-effect transistor (FET), which is specifically designed to enhance audio device performance. It is a high current, low-voltage device capable of achieving high external efficiency. This device can be used as a switching element in systems requiring extremely low-noise and high-frequency operation. Due to its fast switching capability, this device can be used for many application scenarios, including analog signal amplification, load switching, and voltage regulation.

MCH3383-TL-H has an integrated latch on the source and drain legs. This latch helps to reduce the switching times of the device and allow for greater EMI performance and fast response times. It also helps stabilize the output voltage and provides greater system reliability. It is a high-performance device that is suitable for audio devices with up to 48 kHz sample rates. In addition, its wide range of operating temperature makes it suitable for applications in extreme environments.

In terms of its electrical characteristics, MCH3383-TL-H has a maximum gate-source voltage (Vgs) of -60V, a maximum drain-source voltage (Vds) of -20V, a maximum drain current (Id) of 0.8A, a minimum on-resistance (Ron) of 0.7 Ω and a total gate charge (Qg) of 0.85nC. This makes it one of the best performing FETs available in the market. It also has a low input capacitance (Ciss), which makes it very useful in circuits that require a fast response time.

The working principle of MCH3383-TL-H is based on the principle of channel-modulated depletion mode FETs. The device is operated in the accumulation mode and has two N-type conduction channels that are connected by a gate voltage. When the gate voltage is applied, it creates a modulation in the channel and alters the width of the channel. This, in turn, controls the current flow through the device. When the gate voltage is removed, the channels close, reducing the current flow through the device.

In conclusion, the MCH3383-TL-H is a single mixed signal power field-effect transistor (FET) and is specifically designed to enhance audio device performance. It is suitable for applications that require high-frequency and low-noise operation. It has integrated latching on the source and drain legs, and a wide operating temperature range. The device is operated in the accumulation mode and has two N-type conduction channels that are connected by a gate voltage. This device offers excellent electrical characteristics with high gate-source voltage (Vgs), low input capacitance (Ciss), and high total gate charge (Qg).

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