Allicdata Part #: | MCH3474-TL-WOSTR-ND |
Manufacturer Part#: |
MCH3474-TL-W |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 4A MCPH3 |
More Detail: | N-Channel 30V 4A (Ta) 1W (Ta) Surface Mount SC-70F... |
DataSheet: | MCH3474-TL-W Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10668 |
Vgs(th) (Max) @ Id: | 1.3V @ 1mA |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | SC-70FL/MCPH3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 430pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 4.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The MCH3474-TL-W is a single-Drain, enhancement-mode field effect transistor (FET), which offers a wide range of practical applications. The device is a monolithically integrated circuit that has been optimized to offer improved performance and reliability. In practical implementations, the device provides extremely low on-resistance, good breakdown voltage and low gate leakage current.
The MCH3474-TL-W is designed for use as a power switch, providing a high-speed switching solution for applications such as DC/DC conversion and power regulation. Its high-speed switching capabilities make it particularly suitable for use in applications such as intelligent lighting, switch mode power supplies, data processing, and more. The MCH3474-TL-W is also suitable for use as an audio switch in digital audio systems and as a motor control switch in motor control systems.
MCH3474-TL-W FETs have an extremely low on-resistance, allowing for lower power dissipation and improved switching performance. This translates into improved efficiency for the circuit, as well as longer battery life, improved response times and improved power management. Additionally, the device has a low gate leakage current, allowing for higher accuracy and improved reliability in some applications.
The MCH3474-TL-W operates based on the same working principle as all enhancement mode FETs. In this type of device, the channel is normally non-conductive and therefore “OFF.” The voltage between the gate and the drain determines how hard the channel is pulled into conduction, with a higher gate-drain voltage resulting in a lower on-resistance, which in turn makes the channel better able to conduct current. When the gate voltage is reduced to zero, the channel automatically switches back to OFF and no current can flow through the transistor. In this way, the device is able to act as a switch, turning the circuit ON or OFF as needed.
In addition to its use as a power switch, the MCH3474-TL-W can also be used as a voltage regulator, allowing for improved accuracy, power efficiency and response times in wide range of circuit designs. Through its integrated design, the MCH3474-TL-W is able to control the voltage between the drain and the gate in order to regulate the output voltage. This is done by controlling the current flow through the transistor, and it allows for improved reliability and accuracy in a range of systems.
The MCH3474-TL-W also offers improved performance for RF signal processing. Its extremely low on-resistance allows for better signal power and signal transmission performance, which is ideal for use in radio communication and signal transmission systems. Additionally, its low gate leakage current reduces noise and distortion in the signal, allowing for improved performance in a range of practical applications.
Overall, the MCH3474-TL-W is an incredibly versatile single-Drain FET, with a wide range of applications in the fields of power management, audio, voltage regulation and RF signal processing. Its high-speed switching capabilities, low on-resistance, low gate leakage current and integrated design make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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